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Heating method for producing similar single crystal silicon ingot materials by using casting method

A technology of single crystal silicon ingot and heating method, which is applied in the heating of silicon ingot chemical material and the heating field of similar single crystal silicon ingot chemical material produced by casting method, which can solve the problems of inability to grow similar single crystal silicon ingot and process failure, so as to improve production efficiency , to ensure the effect of production safety

Inactive Publication Date: 2013-09-25
ANYANG PHOENIX PHOTOVOLTAIC TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is also impossible to grow a similar single crystal, resulting in the failure of the entire process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Casting method produces similar single crystal silicon ingot chemical material heating method, in the process of growing similar single crystal (quasi-single crystal) in the ingot furnace, during the heating process of the ingot furnace from room temperature, the following controls are carried out as required:

[0026] aBy controlling the heating power and heating time, make ΔT=TC1-TC2 when TC1≤1170 degrees Celsius, ΔT≤800 degrees Celsius; other ΔT range values ​​can also be set as required.

[0027] b When TC1 reaches > 1170 degrees Celsius, by controlling the heating power, heating time and the position of the heat insulation cage, make 150 degrees Celsius ≤ ΔT ≤ 400 degrees Celsius; other ΔT range values ​​can also be set as required.

[0028] c When TC1 reaches the predetermined maximum temperature, it enters the stage of grasping the seed crystal.

[0029] Wherein, the predetermined maximum temperature refers to 1420-1440 degrees Celsius (such as 1420 degrees Celsi...

Embodiment 2

[0031] Casting method produces similar single crystal silicon ingot chemical material heating method, in the process of growing similar single crystal (quasi-single crystal) in the ingot furnace, during the heating process of the ingot furnace from room temperature, the following controls are carried out as required:

[0032] aBy controlling the heating power and heating time, make ΔT=TC1-TC2 when TC1≤1170 degrees Celsius, ΔT≤700 degrees Celsius; other ΔT range values ​​can also be set as required.

[0033] b When TC1 reaches >1170 degrees Celsius, by controlling the heating power and heating time and the position of the heat insulation cage, make 170 degrees Celsius ≤ ΔT ≤ 380 degrees Celsius; other ΔT range values ​​can also be set as required.

[0034] c When TC1 reaches the predetermined maximum temperature, it enters the stage of grasping the seed crystal.

[0035] Wherein, the predetermined maximum temperature refers to 1580-1600 degrees Celsius (such as 1600 degrees Cel...

Embodiment 3

[0037] Casting method produces similar single crystal silicon ingot chemical material heating method, in the process of growing similar single crystal (quasi-single crystal) in the ingot furnace, during the heating process of the ingot furnace from room temperature, the following controls are carried out as required:

[0038] aBy controlling the heating power and heating time, make ΔT=TC1-TC2 when TC1≤1170 degrees Celsius, ΔT≤600 degrees Celsius. Other ΔT range values ​​can also be set as required.

[0039] b When TC1 reaches > 1170 degrees Celsius, by controlling the heating power, heating time and the position of the heat insulation cage, make 190 degrees Celsius ≤ ΔT ≤ 360 degrees Celsius. Other ΔT range values ​​can also be set as required.

[0040] c When TC1 reaches the predetermined maximum temperature, it enters the stage of grasping the seed crystal.

[0041] Wherein, the predetermined maximum temperature refers to 1500-1520 degrees Celsius (such as 1500 degrees Cel...

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PUM

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Abstract

The invention discloses a heating method for producing similar single crystal silicon ingot materials by using a casting method, relating to a heating method for silicon ingot materials. In the heating process of an ingot casting furnace from room temperature to a preset maximum temperature, the heating method comprises the following control measures of: a, when a TC (Temperature Coefficient) 1 is less than or equal to 1170 DEG C, controlling delta T to be less than or equal to 800 DEG C; b, when the TC1 is greater than 1170 DEG C, controlling the delta T to be greater than or equal to 150 DEG C but less than or equal to 400 DEG C; and c, when the TC1 is up to the preset maximum temperature, entering a stage of grabbing crystal seeds. The heating method disclosed by the invention has the beneficial effects: through utilizing the method, the temperature gradient is controlled in a sustainable range of a ceramic material in the heating process to ensure that the crystal seeds are solidified at the bottom of the furnace and are not melted or floated and a crucible is not cracked because of bearing excessive thermal stresses, therefore, the production safety is guaranteed and the production benefit is increased.

Description

technical field [0001] The invention relates to the field of crystal growth, and further relates to a method for heating silicon ingots, in particular to a method for heating similar single crystal silicon ingots by casting. Background technique [0002] The methods of producing silicon ingots include: CZ method to produce monocrystalline silicon ingots, ingot casting method to produce polycrystalline silicon ingots, FZ method to produce monocrystalline silicon ingots, EFG to produce silicon ribbons and other methods. Due to cost issues, currently solar cells mainly use CZ method single crystal silicon wafers and casting method polycrystalline silicon wafers. The manufacturing cost of CZ monocrystalline silicon is 4 to 5 times that of ingot polysilicon, and the energy consumption is 5 to 7 times higher, resulting in less and less market share of CZ monocrystalline silicon. However, due to the production of polycrystalline silicon ingots by the ingot method, there are a larg...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 石坚熊涛涛
Owner ANYANG PHOENIX PHOTOVOLTAIC TECH