System and method for carrying out in-situ detection on odd aberration of projection objective for photoetching machines
A technology of projection objective lens and in-situ detection, which is applied in the field of lithography machine, and can solve problems such as the detection accuracy of limited wave aberration
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[0059] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.
[0060] figure 1 It is a structural schematic diagram of the in-situ detection system for the odd aberration of the projection objective lens of the lithography machine of the present invention. It can be seen from the figure that the in-situ detection system for the odd aberration of the projection objective lens of the lithography machine of the present invention includes a light source 1 for generating an illumination beam, and adjusting the light emitted by the light source 1. Illumination method and partial coherence factor of the light beam and an illumination system 2 for uniformly illuminating the light beam, a mask table 3 equipped with a mask and using a positioning device 6 to realize precise positioning, a mask 4 including a detection mark 5, and an image of a mask pattern And t...
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