Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fast propagation method of winter host moss of Chinese gall aphid

A gallic and aphid technology, applied in the field of rapid propagation of gallic aphid winter host moss, can solve the problems of low reproduction coefficient, affecting economic benefits and popularization and application, and affecting the production enthusiasm of benong

Active Publication Date: 2013-01-09
JIURUI BIOLOGY & CHEM CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Gallnut production requires three elements of "aphids, moss, and double trees". Due to the limitation of the ecological environment, the productivity of gallnuts in the country is currently low, and the average yield per mu in wild natural conditions is about 1 kg; the average yield per mu in artificially constructed double forests is about 8-15 kg , the technical and economic benefits are low, which seriously affects the production enthusiasm of Beinong
At present, the artificial planting of gallnut in my country mainly adopts the techniques of "picking and retaining seeds, planting moss to propagate aphids, and artificially hanging bags". The technique of planting moss in pits is labor-intensive and the reproduction coefficient is low (generally 4-5 times), which affects the technical and economic benefits and popularization and application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] The rapid propagation method of Galla aphid winter host moss, concrete method and steps are as follows:

[0015] (1) select the gentle slope shady wetland among the forests as the breeding moss nursery, with an area of ​​24 square meters, divided into furrows along the slope, with a furrow width of 1.2 meters;

[0016] (2) select the black soil that contains many humus, mix evenly with 20% sieved fire soil ash, be mixed with nutritious soil, for subsequent use;

[0017] (3) Collection and collection of side branch Spongelis and wetland Spongelis as kind of moss 1, for subsequent use;

[0018] (4) Lay non-woven fabric on the wah as a moss carrier, cut it every one meter, cover the non-woven fabric with 2 cm of nutrient soil, and plant the moss after pouring water. The density is 3x3 cm. 0.3kg of moss per square meter;

[0019] (5) Lay mulch film on the border after moss planting to keep moisture;

[0020] (6) Build a sunshade net at a height of 2.2 meters above the mo...

Embodiment 2

[0023] Except that there is no need to cover the mulch to keep moisture on the border after planting moss, other methods and steps are the same as in Example 1. After 2 months, five points were sampled to measure the biological yield of moss with different treatments, and the reproduction coefficient was calculated. The resulting yield was 2.17kg / m 2 , reproduction coefficient 6.23.

[0024] The above-mentioned examples show that the multiplication coefficient of the film-covering treatment is 5.6 higher than that of the non-film-covering treatment, which is higher than that of the commonly used open-field moss planting technology, and the transportation is convenient and the labor efficiency is high.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a fast propagation method of winter host moss of Chinese gall aphid, comprising the following steps of: selecting a dank forest land as a moss nursery of the winter host moss of the Chinese gall aphid; selecting loose and fertile black soil containing much humus, and blending with 20 percent of screened fired soil ash to prepare nutrient soil; flattening the moss nursery,and dividing into plots; flatly paving non-woven fabrics on the plots; paving the nutrient soil on the non-woven fabrics; completely watering the nutrient soil, and then planting seed mosses; after the seed mosses are planted, covering mulching films on the plots for moisture preservation; constructing a sun-shading net on the moss nursery; uncovering the mulching films after a half month, weeding and removing impurities; and inoculating aphids migrating in autumn after two months. According to the fast propagation method disclosed by the invention, the growth speed and the propagation coefficient of the winter host moss can be greatly increased, and the fast propagation effect of Chinese gall mosses is very outstandingly enhanced.

Description

technical field [0001] The invention relates to a rapid propagation method of the moss which is the winter host of Galla aphid, and is particularly suitable for the rapid propagation method of the moss which is the winter host of the Galla aphid and the gall aphid. Background technique [0002] Gallnut is a gall formed by aphids parasitizing on the compound leaves of the genus Salmonella, Red Bran Poplar, and Green Bran Poplar in the Anacardaceae family. Gallnut production requires three elements of "aphids, moss, and double trees". Due to the limitation of the ecological environment, the productivity of gallnuts in the country is currently low, and the average yield per mu in wild natural conditions is about 1 kg; the average yield per mu in artificially constructed double forests is about 8-15 kg , The technical and economic comparison benefits are low, which seriously affects the production enthusiasm of Beinong. At present, the artificial planting of gallnut in my count...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): A01G1/00A01K67/033
CPCY02A40/22
Inventor 王文茂汤先赤汤赫
Owner JIURUI BIOLOGY & CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products