Preparation method of laminated chip negative temperature coefficient thermistor

A technology of negative temperature coefficient and thermistor, applied in the direction of resistors with negative temperature coefficient, etc., can solve the problem of low precision and achieve the effect of high precision

Inactive Publication Date: 2011-12-07
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, due to the rapid development of these fields, especially the mobile communication and automobile industries, the requirements for chip NTC thermistors used in these industries, especially as temperature-compensated crystal oscillators, have increased significantly, and because chip NTC thermistors The prod

Method used

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  • Preparation method of laminated chip negative temperature coefficient thermistor
  • Preparation method of laminated chip negative temperature coefficient thermistor
  • Preparation method of laminated chip negative temperature coefficient thermistor

Examples

Experimental program
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Embodiment 1

[0020] a. Using analytically pure trimanganese tetroxide, tricobalt oxide, nickel oxide and silicon dioxide as raw materials, mix them in a molar ratio of 17.2:15.3:0.7:0.5 to obtain a powder;

[0021] b, the mixed powder obtained in step a is ball milled in an ultrafine ball mill for 3 hours in a weight ratio powder: deionized water: zirconium balls 1: 1: 4, to obtain a uniformly mixed slurry;

[0022] c. Dry the slurry in step b in an oven at a temperature of 120° C., grind for 30 minutes, place it in a muffle furnace at a temperature of 700° C. for 2 hours, and obtain a black negative temperature coefficient heat-sensitive fine powder;

[0023] d. Grind and mix the powder of step c in an agate tank for 24 hours according to the weight ratio of powder: casting agent 1:0.9 to obtain a negative temperature coefficient heat-sensitive casting slurry, wherein the casting agent is toluene, LS-adhesive Agent (commercially available) and alcohol are mixed uniformly in a weight ratio...

Embodiment 2

[0027] a. Using analytically pure trimanganese tetroxide, tricobalt tetroxide, nickel trioxide and silicon dioxide as raw materials, mix them in a molar ratio of 16:15.3:0.7:4.5 to obtain a powder;

[0028] b, the mixed powder obtained in step a is ball milled in an ultrafine ball mill for 3 hours in a weight ratio powder: deionized water: zirconium balls 1: 1: 4, to obtain a uniformly mixed slurry;

[0029] c. Dry the slurry in step b in an oven at a temperature of 120° C., grind for 40 minutes, place it in a muffle furnace at a temperature of 700° C. for 2 hours, and obtain a black negative temperature coefficient heat-sensitive fine powder;

[0030] d. Grind and mix the powder of step c in an agate tank for 24 hours according to the weight ratio of powder: casting agent 1:0.9 to obtain a negative temperature coefficient heat-sensitive casting slurry, wherein the casting agent is toluene, LS-adhesive Agent (commercially available) and alcohol are mixed uniformly in a weight ...

Embodiment 3

[0034] a. Using analytically pure trimanganese tetroxide, tricobalt tetroxide, nickel trioxide and silicon dioxide as raw materials, mix them in a molar ratio of 16.5: 15.3: 0.7: 3.0 to obtain a powder;

[0035] b, the mixed powder obtained in step a is ball milled in an ultrafine ball mill for 3 hours in a weight ratio powder: deionized water: zirconium balls 1: 1: 4, to obtain a uniformly mixed slurry;

[0036] c. Dry the slurry in step b in an oven at a temperature of 120°C, grind it for 50 minutes, place it in a muffle furnace at a temperature of 700°C for 2 hours, and obtain a black negative temperature coefficient heat-sensitive fine powder;

[0037] d. Grind and mix the powder of step c in an agate tank for 24 hours according to the weight ratio of powder: casting agent 1:0.9 to obtain a negative temperature coefficient heat-sensitive casting slurry, wherein the casting agent is toluene, LS-adhesive Agent (commercially available) and alcohol are mixed uniformly in a wei...

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Abstract

The invention relates to a laminated chip type negative temperature coefficient thermistor and a preparation method thereof. The thermistor uses trimanganese tetroxide, tricobalt tetroxide, nickel trioxide and silicon dioxide as raw materials, and the raw material powder is mechanically The negative temperature coefficient thermal fine powder is synthesized by ball milling method, and then the laminated chip negative temperature coefficient thermistor can be obtained by tape casting (ribbon casting), sintering and coating metal electrode technology, and the obtained laminated negative temperature coefficient thermistor The temperature coefficient thermistor is small in size and high in precision. Its material constant B value is 4030-4105, and the allowable deviation of B value is ±1%. KΩ.

Description

technical field [0001] The invention relates to a preparation method of a laminated chip type negative temperature coefficient thermistor. Background technique [0002] At present, negative temperature coefficient (NTC) thermistors are widely used in temperature control, temperature detection, temperature compensation, integrated circuit protection and other occasions, among which chip NTC thermistors can be used for temperature control in the fields of telecommunications, household appliances, automobiles and medical treatment, etc. Control, temperature detection, temperature compensation, integrated circuit protection. In recent years, due to the rapid development of these fields, especially the mobile communication and automobile industries, the requirements for chip NTC thermistors used in these industries, especially as temperature-compensated crystal oscillators, have increased significantly, and because chip NTC thermistors The production of the chip NTC thermistor, ...

Claims

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Application Information

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IPC IPC(8): H01C7/04
Inventor 康雪雅王海珍韩英孙光臣
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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