Sonos structure and its production method

Abstract

The invention provides a SONOS structure, comprising: a silicon semiconductor substrate containing silicon curved surface protrusions, an active region and a drain region are formed in adjacent regions of the silicon curved surface protrusions; the silicon curved surface protrusions are sequentially formed with the first One oxide layer, nitride layer, second oxide layer, polysilicon layer. The invention also provides a manufacturing method of the SONOS structure. By adopting the SONOS structure provided by the present invention, the erasing saturation phenomenon can be avoided during use.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a SONOS structure and a manufacturing method thereof. Background technique [0002] Random access memories, such as DRAM and SRAM, have the problem of data loss after power failure during use. To overcome this problem, people have designed and developed a variety of non-volatile memories. For example, a silicon-oxide-nitride-oxide-silicon (SONOS) structure. [0003] figure 1 It is an existing SONOS structure, including: a silicon substrate 10, a first oxide layer 11, a nitride layer 12, a second oxide layer 13, a polysilicon layer 14 as a gate, and a silicon The source region 101 and the drain region 102 in the silicon substrate 10. SONOS structure, such as NMOS, the writing process is: V GS Greater than the turn-on voltage, when the drain region 102 and the source region 101 form a positive voltage drop, the hot carrier transitions through the first oxide layer 11 and ent...

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Problems solved by technology

[0004] However, during the use of this SONOS structure, the phenomenon of erase saturation often occurs, that is, the problem of unclean erase

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