Sonos structure and its production method

Abstract

The invention provides a SONOS structure, comprising: a silicon semiconductor substrate containing silicon curved surface protrusions, an active region and a drain region are formed in adjacent regions of the silicon curved surface protrusions; the silicon curved surface protrusions are sequentially formed with the first One oxide layer, nitride layer, second oxide layer, polysilicon layer. The invention also provides a manufacturing method of the SONOS structure. By adopting the SONOS structure provided by the present invention, the erasing saturation phenomenon can be avoided during use.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a SONOS structure and a manufacturing method thereof. Background technique [0002] Random access memory, such as DRAM and SRAM, has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. For example a silicon-oxide-nitride-oxide-silicon (SONOS) structure. [0003] figure 1 It is an existing SONOS structure, comprising: a silicon substrate 10, forming a first oxide layer 11, a nitride layer 12, a second oxide layer 13, a polysilicon layer 14 as a gate and forming a silicon substrate 10 stacked in sequence A source region 101 and a drain region 102 in the silicon substrate 10 . SONOS structure, such as NMOS, the writing process is: V GS greater than the turn-on voltage, when the drain region 102 and the source region 101 form a positive voltage drop, the hot carrier jumps thro...

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Problems solved by technology

[0004] However, during the use of this SONOS structure, the phenomenon of erase saturation often occurs, that is, the problem of unclean erase

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