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Transistor assembly and manufacturing method thereof

A manufacturing method and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as environmental pollution and energy consumption

Inactive Publication Date: 2011-12-21
刘文超
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional thermal evaporation method needs to consume a lot of money and energy, such as expensive equipment, the use of pump oil and the power consumed by related equipment, etc., which will cause environmental pollution and energy consumption.

Method used

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  • Transistor assembly and manufacturing method thereof
  • Transistor assembly and manufacturing method thereof
  • Transistor assembly and manufacturing method thereof

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Embodiment Construction

[0046] In order to enable those skilled in the art to understand the purpose of the present invention, preferred embodiments of the present invention are described in detail below in conjunction with the drawings.

[0047] Please refer to figure 1 and Figure 11 As shown, the transistor assembly 1 of the present invention comprises:

[0048] A semiconductor substrate 10;

[0049] A drain 11 is formed on the semiconductor substrate 10;

[0050] A source 12 is formed on the semiconductor substrate 10 and does not overlap the drain 11;

[0051] A gate metal seed layer 13 is formed on the semiconductor substrate 10 without overlapping the drain 11 and the source 12, and has a gel-like substance layer 131 and a plurality of metal seeds 132; and

[0052] A Schottky contact metal gate 14 is formed on the gate metal seed layer 13 .

[0053] Wherein, the semiconductor substrate 10 includes:

[0054] a substrate 101;

[0055] A nucleation layer 102 is formed on the substrate 101...

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Abstract

A transistor component and its manufacturing method, the component includes: a semiconductor substrate, a drain, a source, a gate metal seed layer formed on the semiconductor substrate, which has a gel-like substance layer And a plurality of metal seeds and a Schottky contact metal gate are formed on the gate metal seed layer. The method includes: step A: providing a semiconductor substrate; step B: forming a drain and a source on the semiconductor substrate; step C: defining a region of a gate metal seed layer on the semiconductor substrate; Step D: performing a sensitization and activation process to form the gate metal seed layer on the semiconductor substrate; and Step E: performing an electroless plating process to form a Schottky contact metal gate on the gate metal crystal above the seed layer.

Description

technical field [0001] The present invention relates to a transistor component and its manufacturing method, in particular to a transistor component and its manufacturing method which use sensitization, activation and electroless plating to process the gate process technology. Background technique [0002] In recent years, the application of gallium nitride (GaN) in field effect transistor components among the III-V compound semiconductor materials has been booming. The main reason is that compared with gallium arsenide (GaAs), gallium nitride (GaN) GaN has the following advantages: wider bandgap, higher breakdown voltage, stronger bonding force and better thermal stability, so gallium nitride is very suitable for power supplies, Amplifiers and high-temperature components and other products. [0003] However, as far as the transistor components of the current thermal evaporation gate process are concerned, the gate metal deposition of the transistor components generally ado...

Claims

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Application Information

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IPC IPC(8): H01L29/812H01L29/47H01L21/338H01L21/283C23C18/28
Inventor 刘文超陈慧英陈利洋黄建彰
Owner 刘文超
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