Transistor assembly and manufacturing method thereof
A manufacturing method and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as environmental pollution and energy consumption
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[0046] In order to enable those skilled in the art to understand the purpose of the present invention, preferred embodiments of the present invention are described in detail below in conjunction with the drawings.
[0047] Please refer to figure 1 and Figure 11 As shown, the transistor assembly 1 of the present invention comprises:
[0048] A semiconductor substrate 10;
[0049] A drain 11 is formed on the semiconductor substrate 10;
[0050] A source 12 is formed on the semiconductor substrate 10 and does not overlap the drain 11;
[0051] A gate metal seed layer 13 is formed on the semiconductor substrate 10 without overlapping the drain 11 and the source 12, and has a gel-like substance layer 131 and a plurality of metal seeds 132; and
[0052] A Schottky contact metal gate 14 is formed on the gate metal seed layer 13 .
[0053] Wherein, the semiconductor substrate 10 includes:
[0054] a substrate 101;
[0055] A nucleation layer 102 is formed on the substrate 101...
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