Transistor assembly and manufacturing method thereof

Abstract

A transistor component and its manufacturing method, the component includes: a semiconductor substrate, a drain, a source, a gate metal seed layer formed on the semiconductor substrate, which has a trihydroxychloride The tin layer, multiple metal crystals and a Schottky contact metal gate are formed on the gate metal seed layer. The method includes: step A: providing a semiconductor substrate; step B: forming a drain and a source on the semiconductor substrate; step C: defining a region of a gate metal seed layer on the semiconductor substrate; Step D: performing a sensitization and activation process to form the gate metal seed layer on the semiconductor substrate; and Step E: performing an electroless plating process to form a Schottky contact metal gate on the gate metal crystal above the seed layer.

Description

technical field [0001] The present invention relates to a transistor component and its manufacturing method, in particular to a transistor component and its manufacturing method which use sensitization, activation and electroless plating to process the gate process technology. Background technique [0002] In recent years, the application of gallium nitride (GaN) in field effect transistor components among the III-V compound semiconductor materials has been booming. The main reason is that compared with gallium arsenide (GaAs), gallium nitride (GaN) GaN has the following advantages: wider bandgap, higher breakdown voltage, stronger bonding force and better thermal stability, so gallium nitride is very suitable for power supplies, Amplifiers and high-temperature components and other products. [0003] However, as far as the transistor components of the current thermal evaporation gate process are concerned, the gate metal deposition of the transistor components generally ado...

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Problems solved by technology

The traditional thermal evaporation method needs to consume a lot of money and energy, such as expensive equipment, the use of pump oil and the power consumed by related equipment, etc., which will cause environmental pollution and energy consumption.

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