InP-based MOSHEMT structure and preparation method thereof

Abstract

The present invention discloses an InP-based MOSHEMT structure and a preparation method thereof. The structure comprises from up to down in order: a single crystal substrate (101); a variable In component InxAl(1-x)As buffer layer (102) formed on the upper surface of the single crystal substrate; an In0.52Al0.48As buffer layer (103); a planar doping layer (104) formed in the buffer layer; an In0.7Ga0.3As channel layer (105); an In0.6Ga0.4As channel layer (106); an In0.5Ga0.5As channel layer (107); an InP barrier layer (108); and a planar doping layer (109) formed in the barrier layer. The InP-based MOSHEMT structure and the preparation method thereof employ a component gradual changing buffer layer to reduce the lattice mismatch between III-V semiconductors so as to reduce the defects caused by dislocation. The device structure reduces the MOS interface state density and employs a high In component In0.7 Ga0.3As / In0.6Ga0.4As / In0.5Ga0.5As composite channel design to fully improve the concentration and the electronic mobility of the two two-dimensional electron gas and reduce the square resistance of the channel.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an InP-based MOSHEMT structure and a preparation method thereof. Background technique [0002] At present, the mainstream of the semiconductor industry is silicon technology. With the development of the smallest size of semiconductor technology to the nanometer scale, silicon integrated circuit technology is increasingly approaching its theoretical and technical double limit. Compared with silicon materials, III-V semiconductor materials have higher electron mobility (6-60 times) and have more excellent electron transport properties under low electric field and strong field. Therefore, III-V semiconductor materials Materials will be an inevitable choice for a new generation of ultra-high frequency and low power integrated electronic systems. [0003] However, the channel two-dimensional electron gas concentration and electron mobility of traditional InP-based HEMTs...

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Problems solved by technology

[0003] However, the channel two-dimensional electron gas concentration and electron mobility of traditional InP-based HEMTs cannot be achieved due to the influence of the material structure, so that the conductive channel electron mobility and two-dimensional electron gas concentration are both large, which limits the InP-based HEMT. The Development of Devices in Microwave Communication

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