Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An Inverse Class F Power Amplifier

A power amplifier and circuit technology, applied in power amplifiers, improving amplifiers to improve efficiency, etc., can solve the problems of inconsistent voltage waveforms and current waveforms, and achieve the effect of improving work efficiency and reducing impact

Inactive Publication Date: 2011-12-21
UNIV OF SCI & TECH OF CHINA +1
View PDF4 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of these parasitic components causes the voltage waveform and current waveform observed at the output pin of the transistor to be inconsistent with the voltage waveform and current waveform of the actual internal chip drain.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An Inverse Class F Power Amplifier
  • An Inverse Class F Power Amplifier
  • An Inverse Class F Power Amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The existing inverse class F power amplifier processes the harmonic components of the drain voltage and current of the transistor through a harmonic control circuit, such as figure 1 , figure 2 As shown, the finally obtained drain current waveform is in the form of a square wave, and the drain voltage waveform is in the form of a half sine wave. Drain current I d waveform and voltage V d The waveforms do not overlap, reducing energy loss in the transistor and increasing its efficiency. It should be noted that in order to achieve this ideal working efficiency, the harmonic impedance of the drain needs to satisfy the following relationship:

[0020]

[0021] Among them, Z opt is the optimum impedance of the fundamental wave, Z n is the nth harmonic impedance. That is, match the odd-order harmonic impedance to the short-circuit state at the drain, and match the even-order harmonic impedance to the open-circuit state to synthesize the required drain voltage and cu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an inverse class-F power amplifier, which comprises a transistor, a parasitic compensation circuit, an output end harmonic control circuit and an output end fundamental wave impedance matching circuit, wherein the output end harmonic control circuit is positioned between the output pin of the transistor and the output end fundamental wave impedance matching circuit; the parasitic compensation circuit is positioned in the output end harmonic control circuit, and comprises at least two sections of stepped impedance microstrips which are connected in series; and short-circuit points and / or open circuit points with secondary to quintuple harmonic frequency are formed at the tail ends of the stepped impedance microstrips. The inverse class-F power amplifier provided by the invention can effectively reduce the influence of parasitic components on a harmonic control circuit, so the working efficiency of the power amplifier can be improved.

Description

technical field [0001] The invention relates to the technical field of wireless communication power amplifiers, in particular to an inverse class F power amplifier. Background technique [0002] As an important part of the wireless communication system, the power amplifier's working efficiency directly affects the energy consumption level of the entire wireless communication system. Therefore, how to improve the working efficiency of the power amplifier has always been a research hotspot in the field of power amplifiers. [0003] As a kind of switching power amplifier, the inverse class F power amplifier includes: sequentially connected transistors, a harmonic control circuit, and a fundamental wave impedance matching circuit. With the help of the harmonic control circuit, it processes the harmonic components of the transistor drain voltage and current, matches the even harmonic impedance of the signal to the open circuit state at the transistor drain, and matches the odd h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03F3/20H03F1/02
Inventor 尤览刘发林丁瑶杨光
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com