External continuous feeding mechanism for monocrystal furnace

A technology of feeding mechanism and single crystal furnace, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve problems such as failure to be effectively improved, troubles of production enterprises, etc., to increase the effective use time and improve the utilization rate , the effect of improving the efficiency of use

Active Publication Date: 2014-02-19
ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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AI Technical Summary

Problems solved by technology

It has been 93 years since the Czochralski silicon single crystal growth furnace was put into use, but this situation has not been effectively improved
In addition, the quartz crucible itself has a service life. How to maximize the single-furnace feeding amount and improve the utilization rate of the quartz crucible during its service life has always brought serious troubles to related manufacturers.

Method used

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  • External continuous feeding mechanism for monocrystal furnace
  • External continuous feeding mechanism for monocrystal furnace

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Embodiment Construction

[0019] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0020] The external continuous feeding mechanism used in the single crystal furnace in the present invention includes a feed bin 1 with a sealing cover 13, the middle is sealed and connected with an O-ring 2 14, and a discharge valve 2 is arranged at the bottom; the feed bin 1 is used for loading For polycrystalline silicon materials, the total weight of polycrystalline silicon materials in a single load shall not be less than 30kg.

[0021] The discharge valve 2 controls the discharge amount through a pneumatic device 12, and a discharge outer pipe 6 of quartz material is set outside the discharge inner pipe 3; The telescopic transmission mechanism 4 of the extending direction of the pipe 3 in the discharge is connected. The transmission mechanism 4 includes a control switch, a stepper motor and a transmission cable, which can be realized by...

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Abstract

The invention relates to auxiliary equipment for Czochralski silicon growth equipment, and aims to provide an external continuous feeding mechanism for a monocrystal furnace. The feeding mechanism includes a bunker with a seal cover; a discharge valve is arranged on bunker bottom; the discharge valve is connected to a discharge inner pipe, which is sleeved by a discharge outer pipe; the discharge outer pipe is connected with a transmission mechanism for realizing telescoping of the discharge outer pipe along a discharge inner pipe extending direction, and the discharge inner pipe, the discharge outer pipe and the transmission mechanism are all arranged inside an airtight cylinder; an airtight cylinder bottom is equipped with a globe valve or a flap valve; an feeding inlet is arranged on an upper part of a main furnace chamber of the monocrystal furnace, and is connected with the globe valve or the flap valve in an airtight way. According to the invention, material charging can be realized without furnace halt to facilitate continuous growth of multiple crystals and save time require by furnace halt, furnace rubbing, charging, vacuum-pumping and material melting, so as to substantially increase production efficiency and utilization rate of a quartz crucible and lower costs effectively.

Description

technical field [0001] The invention relates to auxiliary equipment for Czochralski silicon single crystal growth equipment, in particular to an external continuous feeding mechanism for a single crystal furnace. Background technique [0002] After the traditional Czochralski silicon single crystal furnace completes the raw material pulling production of the first furnace, it needs to do a lot of complicated preliminary work for the production of the new furnace, including stopping the furnace for cooling, cleaning the furnace, charging, vacuuming, chemicalizing materials, etc. process. These complicated pre-works waste a lot of time. This is because, the more feeding amount per production cycle, the heavier the drawn crystal, the smaller the unit energy, and the higher the efficiency. It has been 93 years since the Czochralski silicon single crystal growth furnace was put into use, but this situation has not been effectively improved. In addition, the quartz crucible its...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/02
Inventor 朱亮曹建伟邱敏秀王巍沈兴潮
Owner ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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