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Three-dimensional high-speed high-density nonvolatile memory

A memory, high-density technology, used in semiconductor devices, electrical solid-state devices, electrical components, etc., to achieve the effect of improving storage density, excellent storage performance, and being beneficial to a wide range of applications

Inactive Publication Date: 2012-01-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] With the rapid development of microelectronics technology, the size of semiconductor devices is further scaled down. When the channel length is reduced to 45nm or below, the traditional channel hot electron injection programming method faces problems due to the extremely small channel length.

Method used

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Embodiment Construction

[0022] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0023] figure 1 It is a structural schematic diagram of the three-dimensional high-speed high-density non-volatile memory of the present invention. The semiconductor substrate 101 is a silicon wafer, a silicon germanium wafer, other similar semiconductor materials, or a multilayer substrate material including an epitaxial silicon layer and a silicon germanium layer. Dielectric isolation layers 102a, 102b, 102c, 102d, 102e are made of silicon dioxide or other materials with similar properties, and 103a, 103b, 103c, 103d are made of silicon nitride or other materials with similar properties. Gate regions 108a, 108b, 108c, 108d. Word lines are further drawn from the gate area and connected as required, and the material is ...

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Abstract

The invention discloses a three-dimensional high-speed high-density nonvolatile memory, and belongs to the technical field of microelectronics manufacturing and memories. The high-speed high-density nonvolatile memory has a vertical structure; based on the characteristics of high speed and multiple values of a single-layer structure, a three-dimensional integrated array structure is built, so the storage density is greatly increased. The three-dimensional multi-value nonvolatile memory is high in density and easy for integration, can be made by adopting the traditional memory manufacturing process, and is favorable for promotion and application.

Description

technical field [0001] The invention relates to the technical field of microelectronics manufacturing and storage, in particular to a multi-value non-volatile storage with three-dimensional integration characteristics and localized storage of charges. Background technique [0002] The current microelectronics products are mainly divided into two categories: logic devices and storage devices, and storage devices are needed in almost all electronic products today, so storage devices occupy a very important position in the field of microelectronics. Storage devices can generally be classified into volatile memories and non-volatile memories. The main feature of non-volatile memory is the ability to retain stored information for a long period of time without power on. It not only has the characteristics of read-only memory (ROM), but also has high access speed, and is easy to erase and rewrite, and consumes less power. With the demand for large-capacity and low-power storage i...

Claims

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Application Information

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IPC IPC(8): H01L27/115
Inventor 刘明朱晨昕霍宗亮闫锋王琴龙世兵
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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