Lead-free hybrid perovskite material electric memory device and preparation method thereof

A technology for electrical storage and devices, which is applied in the field of lead-free hybrid calcium carbon mineral electrical storage devices and its preparation, can solve the problems of complex process, low storage density, and high manufacturing cost, and achieve good storage performance, stable and reliable performance, Flexible performance and reliable effect

Inactive Publication Date: 2018-10-12
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing technology still has problems such as high preparation cost, complicated process, and low storage density.

Method used

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  • Lead-free hybrid perovskite material electric memory device and preparation method thereof
  • Lead-free hybrid perovskite material electric memory device and preparation method thereof
  • Lead-free hybrid perovskite material electric memory device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Lead-free hybrid calcium carbide MASnBr 3 The configuration diagram of the precursor solution (5mol / L) is shown in figure 1 , all of the following operations are under nitrogen (N ２ ) in a glove box. Take SnBr 2 (2.785g, 10 mmol) with NH 3 CH 2 ∙HBr (1.12g, 10mmol) powder was dissolved in 2 mL of dimethylformamide (DMF) solution, and stirred at 600 rpm to prepare a 5mol / L precursor solution. The preparation schematic diagram is as follows figure 1 shown.

Embodiment 2

[0038] Sandwich device preparation, the prepared device is Au / MASnBr 3 / ITO / SiO 2 sandwich structure. Before spin-coating the functional layer, SiO 2 / ITO (Indium Tin Oxide) film is first washed with washing powder, then ultrasonicated in deionized water, acetone and ethanol for 30 minutes, washed and dried. Subsequently, the SiO 2 / ITO film was cleaned for 15 minutes and set aside.

[0039] All of the following operations are carried out at room temperature under a nitrogen atmosphere (N ２ ) in a glove box. The speed of the homogenizer is first controlled at 1500 rpm, and the 5mol / L MASnBr is spin-coated for 60 seconds. 3 Precursor solution, use poor solvent toluene to assist precipitation; then spin-coated MASnBr 3 / ITO / SiO 2 The film was heated on a heating platform at 70°C for 30 minutes in order to remove excess solvent and form a uniform and dense film. The preparation schematic diagram is shown in figure 1 As shown, the gold electrode is sputtered using the mas...

Embodiment 3

[0042] Memristor, memory capacitive performance test, the Au / MASnBr obtained in embodiment two 3 / ITO / SiO 2 Do I-V performance test, the measured typical curve is as follows figure 2 As shown, (a) the electroforming process and the I-V characteristic curve of the memory device, (b) the 127 continuous cycle I-V curves of the memristive characteristic, (c) the distribution range of the turn-on voltage and the reset voltage, (d) at -0.1 When V is read, the resistance distribution of On / OFF state, (e) When reading at -0.1V, the constant current characteristics of ON / OFF state, (f) in pulse mode, when reading at -0.1V, ON / OFF State durability characteristics; figure 2 It can be shown that the memristive performance of the electric storage device of the present invention has good repeatability and high reliability.

[0043] Obtain Au / MASnBr in embodiment two 3 / ITO / SiO 2 Do C-V, Q-V performance test, the measured typical curves are as follows image 3 As shown, (a) Q-V and C...

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PUM

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Abstract

The invention discloses a lead-free hybrid perovskite material electric memory device and a preparation method thereof. The electric storage behaviors of a memristor and a memo-capacitor are successfully realized, and the electric memory device is impressive due to simple preparation process, stable and reliable device performance and good repeatability and flexibility. The invention provides a brand new design thought for the memristor, especially the memo-capacitor. The memristor can be prepared by using the technical scheme disclosed by the invention, and the memo-capacitor with the brand new conception can be obtained. The application of the lead-free hybrid perovskite MASnBr3 in various memory device elements can be expanded, and the fast development of the subjects including the circuit model analysis, basic circuit design, high-performance integrated circuit, biological memory behavior simulation, chaos theory, and industrial intelligent PID controller are further promoted.

Description

technical field [0001] The invention belongs to the technical field of organic-inorganic hybrid semiconductor materials, and specifically relates to a lead-free hybrid calcium carbon mineral electric storage device and a preparation method thereof. Background technique [0002] In the past few decades, the storage capacity of inorganic semiconductor memory devices has increased significantly, while the size has also decreased significantly. Its basic storage unit is a simple sandwich structure of "electrode / material / electrode", which realizes the storage principle and presents two obvious conductive states under an applied electric field, namely "0" or "OFF" state and "1" or "ON" state. Thus, information storage is realized. However, there are still some problems that need to be solved urgently, such as the limitation of lithographic resolution, complex preparation process and high production cost. In order to meet the requirements of mass storage in the information age, o...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/881H10N70/021
Inventor 路建美贺竞辉钱文虎
Owner SUZHOU UNIV
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