Hf<x>Si<1-x>O2 multi-component oxide storage material-based charge storage device and fabrication method thereof

Abstract

The invention discloses an Hf<x>Si<1-x>O2 charge storage material. A method for fabricating a charge storage device by employing magnetron sputtering can be used for a non-volatile information storagedevice. The method comprises the steps of placing a silicon substrate on a three-target magnetron sputtering substrate table, and sequentially growing an Hf<0.1-0.2>Si<1-x>O2 tunneling layer, an Hf<0.8-0.9>Si<1-x>O2 storage layer, an Hf<0.1-0.2>Si<1-x>O2 blocking layer and a gold electrode on a surface of the silicon substrate by magnetron sputtering to form the charge storage device.

Description

technical field [0001] The invention belongs to the field of microelectronic devices and materials thereof, and relates to a Hf x Si 1-x o 2 Multiple oxide charge storage materials and their applications in nonvolatile charge storage devices. Background technique [0002] With the gradual shrinking of the feature size of semiconductor devices and the continuous improvement of integration, the traditional floating gate non-volatile memory devices have been difficult to meet the market demand. In recent years, metal (Metal)-silicon dioxide (SiO 2 )-Silicon Nitride (Si 3 N 4 )-Silicon dioxide (SiO 2 )-Silicon substrate (Si) type (MONOS) charge memory becomes a candidate structure to replace the floating gate type memory. The main feature of the MONOS charge memory structure is the use of Si 3 N 4 Replace the polysilicon floating gate in the traditional floating gate structure to store charges; SiO next to the silicon substrate 2 As a tunneling layer, SiO next to the m...

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Problems solved by technology

However, this type of structure has the following disadvantages: 1) the tunneling layer SiO 2 The thickness keeps decreasing, the leakage current increases, and the power consumption of the device is serious; 2) the storage layer Si 3 N 4 The trap state density is not high, and the charge storage density is low; 3) the storage layer Si 3 N 4 The defect states have complex energy level distribution, and some of the charges trapped by the shallow energy level defect states are easy to escape, resulting in a decrease in device reliability.

[0003] In order to solve the above problems, multiple oxide materials are used instead of Si 3 N 4 Improving the defect state density of the structure has become a research hotspot, while the research on tunneling layer and barrier layer is less

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