CMOS image sensor and its forming method
An image sensor and heavily doped region technology, applied in the field of image sensors, can solve the problems of inability to collect extremely bright incident light and reduce image resolution, and achieve the effect of improving high dynamic range
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[0043] Due to the narrow dynamic range of the image sensor in the prior art, it is easy to produce high-brightness overflow in scenes with excessive light-dark contrast, especially in scenes with excessive brightness, that is, the image sensor can only capture images below a certain brightness. For the incident light, when the brightness of the incident light is too large, the brightness of the final image at the corresponding point can only be a low constant value, which is inconsistent with the brightness of the incident light at this point, resulting in distortion of the final image.
[0044] The inventor further found that the reason for the high-brightness light overflow is as follows: in the prior art, the photosensitive component of the CMOS image sensor is a photodiode, and the photodiode is formed by lightly doping N-type impurities in the P-type epitaxial layer , a PN junction is formed between the N-type lightly doped region and the P-type epitaxial layer, and the PN...
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