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Power device using spherical groove and making method for the power device

A technology of power devices and trenches, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of easy breakdown and large gate parasitic capacitance, and achieve the distribution of electric field dispersion and gate parasitic capacitance. Reduced, the effect of broad market prospects

Inactive Publication Date: 2012-01-11
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In view of this, the object of the present invention is to propose a power device, which can improve the problems of large gate parasitic capacitance and easy breakdown of existing trench power devices

Method used

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  • Power device using spherical groove and making method for the power device
  • Power device using spherical groove and making method for the power device
  • Power device using spherical groove and making method for the power device

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Embodiment Construction

[0059]Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. Also in the following description, the terms wafer and substrate used may be understood to include the semiconductor wafer being processed, possibly including other thin film layers prepared thereon.

[0060] Figure 2i It is an embodiment of a power device using a spherical groove bottom disclosed by the present invention, and it is a cross-sectional view along the channel length...

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Abstract

The invention discloses a power device using a spherical groove. By the bottom part of a round or elliptic groove, the distribution of an electric field is more decentralized, and the maximum electric field of the bottom part of the groove is reduced; and a thin gate dielectric layer is used in a channel, and a thick gate dielectric layer is used in the bottom part of the round or elliptic groove, so the parasitic capacitance of a gate is reduced, the power consumption of a switch is reduced, and the switching speed of the device is increased. Meanwhile, the invention also discloses a making method for the power device using the spherical groove. The dielectric layers are sacrificed to protect a silicon surface of the gate, so the thin gate dielectric layer in the channel can be automatically aligned and formed. The technical process is simple, and the production cost is reduced.

Description

technical field [0001] The invention relates to a groove-type power device and a manufacturing method thereof, in particular to a power device using a spherical groove and a manufacturing method thereof, and belongs to the field of semiconductor power devices. Background technique [0002] With the continuous development of microelectronics technology, power MOS transistors have high input impedance, low loss, fast switching speed, no secondary breakdown, wide safe working area, good dynamic performance, and easy coupling with the front electrode to achieve high current. With the advantages of high conversion efficiency, gradually replacing bipolar devices has become the mainstream of power device development today. Current power devices mainly include planar diffused MOS transistors (LDMOS) and trench MOS transistors (Trench MOS). Because the trench type MOS transistor uses a vertical channel, the area of ​​the device can be much larger than that of the planar diffusion ty...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336
Inventor 王鹏飞刘磊刘伟
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD