Inverted triple-junction InGaN solar cell

Abstract

The invention relates to an inverted triple-junction InGaN solar cell. The inverted triple-junction InGaN solar cell comprises a substrate, an anode below the semi-transparent current expansion layer and a cathode below a first InGaN cell, wherein a GaN nucleating layer, a GaN buffering layer and a semi-transparent current expansion layer between a triple-junction InGaN cell and a tunnel junction are arranged below substrate in sequence; a cap layer is placed between the semi-transparent current expansion layer and a third InGaN cell; and the anode and the cathode are bonded on a carrier evaporated with a reflective layer through a metal convex point. According to the invention, solar spectrum is sufficiently absorbed by adopting the inverted triple-junction solar cell and a high-dosage layer after the InGaN material growing process as the cap layer, the metal convex point and the carrier; the external quantum efficiency exceeds 70%; the photoelectric conversion efficiency is increased, the service life of the cell is prolonged, the working stability of the cell is enhanced; and the cell can be directly used as a complete cell.

Description

technical field [0001] The invention belongs to the technical field of solar cell structures, in particular to a flip-chip triple-junction InGaN solar cell. Background technique [0002] The known energy sources are non-renewable. After years of mining, the reserves of these energy sources are decreasing day by day, and they will cause serious environmental problems after use. Therefore, people are inexhaustible to solar energy. More and more attention has been paid to green energy, and for a long time, they have been tirelessly looking for materials with high conversion efficiency. In recent years, the third-generation semiconductor materials represented by GaN, InGaN, and AlGaN—group III nitrides have become a research hotspot. They are mainly used in optoelectronic devices and high-temperature, high-frequency, and high-power devices. The research results in 2002 showed that the forbidden band width of InN was not 1.89eV as previously reported but 0.7eV, which means that...

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Problems solved by technology

The currently recognized theoretical conversion efficiency is 41.3%, and the theoretical conversion efficiency of the invention patent is 50%. However, the efficiency of the above-mentioned technical solution is relatively low compared with triple-junction or above-three-junction cells, and the growth process described to InGaN materials cannot be used as a complete solar energy. The battery is directly applied, and the fabrication after the InGaN material growth process will have a great impact on the performance of the solar cell

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