Unlock instant, AI-driven research and patent intelligence for your innovation.

Cleanout fluid used for cleaning after polysilicon texture preparation and preparation method thereof

A cleaning solution and post-cleaning technology, which is applied in chemical instruments and methods, after treatment, and crystal growth, can solve the problems of silicon wafer surface polishing, obvious color difference, and high reflectivity of silicon wafers, and achieve conversion efficiency and quality improvement. Low reflectivity, the effect of increasing the corrosion factor

Inactive Publication Date: 2012-01-25
无锡尚品太阳能电力科技有限公司
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the surface of polysilicon is composed of many crystal planes, the surface of the silicon wafer is particularly bright after the traditional alkali cleaning process, the reflectivity of the silicon wafer is high, and the color difference between the crystal planes is obvious
Moreover, the traditional alkali cleaning process is particularly difficult to control. If the silicon wafer stays in the alkali tank for a little longer, the surface of the silicon wafer will be polished, and all the processed cells will be degraded.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: A method for preparing a cleaning solution for cleaning after polysilicon texturing, comprising the following steps, and the proportion of its components is calculated in parts by weight:

[0016] Take 99.6 parts of deionization and inject it into the cleaning tank, add 0.1 part of sodium hydroxide and stir well, the stirring speed is 60 rpm, and the stirring time is 5 minutes; then add 0.1 part of texturing additive, and after fully stirring evenly, you can get The finished product of the cleaning solution; the stirring speed is 55 rpm, and the stirring time is 6 minutes.

[0017] When in use, put 200 velvet silicon wafers into 150L of prepared cleaning solution for cleaning. After 160 seconds, the best cleaning effect will be achieved. The residual acid on the surface of the silicon wafers will be thoroughly cleaned, and the grain boundaries on the surface will be blurred. The reflectivity is 23.5%, and the surface consistency is good. The conversion eff...

Embodiment 2

[0018] Embodiment 2: A method for preparing a cleaning solution for cleaning after polysilicon texturing, comprising the following steps, and its component ratio is calculated in parts by weight:

[0019] Take 99.8 parts of deionization and inject it into the cleaning tank, add 0.2 parts of sodium hydroxide and stir well, the stirring speed is 60 rpm, and the stirring time is 5 minutes; then add 0.2 parts of texturing additives, after fully stirring, the stirring speed It was 65 rev / min, and the stirring time was 4 minutes; namely, the finished product of the cleaning solution was obtained.

[0020] When in use, put 200 velvet silicon wafers into 150L prepared alkaline solution for cleaning. The best cleaning effect will be achieved in 180 seconds. The residual acid on the surface will be thoroughly cleaned, the grain boundaries on the surface will be fuzzy, and the reflectivity will be 23%. , the surface consistency is good, and the conversion efficiency of this silicon wafer...

Embodiment 3

[0021] Embodiment 3: A method for preparing a cleaning solution for cleaning after polysilicon texturing, comprising the following steps, and its component ratio is calculated in parts by weight:

[0022] Take 99.7 parts of deionization and inject it into the cleaning tank, add 0.15 parts of sodium hydroxide and stir well, the stirring speed is 60 rpm, and the stirring time is 5 minutes; then add 0.15 parts of texturing additive, and after fully stirring, the stirring speed It is 60 revs / min, and the stirring time is 5 minutes; promptly obtains described cleaning solution finished product.

[0023] When in use, put 200 velvet silicon wafers into 150L prepared alkaline solution for cleaning. The best cleaning effect will be achieved in 200 seconds. The residual acid on the surface will be thoroughly cleaned, the grain boundaries on the surface will be fuzzy, and the reflectivity will be 23.8%. , the surface consistency is good, and the conversion efficiency of this silicon wafe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
conversion efficiencyaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a cleanout fluid used for cleaning after polysilicon texture preparation, which is characterized by comprising the following steps of: according to parts by weight of the components, injecting 99.6-99.8 parts of deionized water into a rinse tank; adding 0.1-0.2 part of sodium hydroxide to fully and evenly stir; adding 0.1-0.2 part of texture preparation additive; and fully stirring to obtain the finished product of the cleanout fluid. Compared with the prior art, the preparation method has the following advantages that one additive is introduced in on the basis of the traditional technical basis, corrosion factors are improved, reaction speed is lowered, and the method is convenient to control; surface consistency is high after polysilicon texture preparation alkaline cleaning, and reflectivity is low; the silicon wafer polishing phenomenon is thoroughly solved; and the conversion efficiency and the quality of a battery plate are greatly improved if being compared with the traditional technology.

Description

technical field [0001] The invention relates to a cleaning liquid used for textured polycrystalline silicon in solar cells and a preparation method thereof, belonging to the field of photovoltaic technology. Background technique [0002] Solar energy is an inexhaustible and endless renewable resource for human beings. It has the characteristics of convenient application, no fuel, no gas emission, and no damage to the ecological environment. It is a clean energy and a green energy. With the depletion of non-renewable resources such as coal, oil, and natural gas, solar energy, as a new type of energy, is expected to surpass wind energy, water energy, geothermal energy, nuclear energy, and other resources and become the main pillar of future power supply. The global solar cell industry is booming, and the solar cell manufacturing industries of various countries are scrambling to invest huge sums of money and expand production in order to compete for a place. Driven by the stro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23G1/14C30B33/10
Inventor 顾峰
Owner 无锡尚品太阳能电力科技有限公司