Preparation method of amorphous silicon thin film solar cell module
A technology for solar cell components and amorphous silicon thin films, which is applied in the field of solar energy applications, can solve problems such as low conversion efficiency, and achieve the effect of increasing power generation and widening a range.
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[0013] The invention discloses a method for preparing an amorphous silicon thin-film solar battery module, which belongs to the field of solar energy. In this method, after the first amorphous silicon thin-film solar cell is prepared, another amorphous silicon cell is deposited in reverse order behind the tempered glass on the back plate. The electrodes of the two cells are connected in parallel and then connected to the junction box above the module. The light-receiving surface is opposite to the front-side solar cell, so that the entire battery module can generate electricity on both sides, and the power generation capacity per unit area of the amorphous silicon cell is increased. Include the following steps:
[0014] a. Select the TCO glass with a light transmittance over 90%, carry out the first laser scribing, send it to PECVD, deposit the amorphous silicon layer, and then perform the second laser scribing on the amorphous silicon layer;
[0015] b. The pressure of the...
Embodiment 1
[0024] Select TCO glass with light transmittance over 90%, carry out the first laser scribing, send it to PECVD, deposit the amorphous silicon layer, and then perform the second laser scribing on the amorphous silicon layer;
[0025] The pressure of the SPUTTER process chamber is controlled at 1*10 -6 mbar, the distance between the AZO target and the battery substrate is 80mm, and the Ar gas with a purity of 4N5 or higher is introduced at a flow rate of 300slh, and the AZO film is sputtered with a film thickness of 550nm; the AZO back electrode is scribed by laser, so that the power generation layer of the entire battery is connected to the front and rear electrodes. Connect, weld the positive and negative leads of the battery on the back electrode side, and lead the leads to the edge of the battery plate, spread PVB glue on the back of the battery, the thickness is 0.76mm, laminate the tempered glass of the back plate and send it into the autoclave for lamination;
[0026] De...
Embodiment 2
[0029] Select TCO glass with light transmittance over 90%, carry out the first laser scribing, send it to PECVD, deposit the amorphous silicon layer, and then perform the second laser scribing on the amorphous silicon layer;
[0030] The pressure of the SPUTTER process chamber is controlled at 1.5*10 -6 mbar, the distance between the AZO target and the battery substrate is 90mm, and the Ar gas with a purity of 4N5 or higher is introduced at a flow rate of 350slh, and the AZO film is sputtered with a film thickness of 600nm; the AZO back electrode is scribed by laser, so that the power generation layer of the entire battery is connected to the front and rear electrodes. Connect, weld the positive and negative leads of the battery on the back electrode side, and lead the leads to the edge of the battery plate, spread PVB glue on the back of the battery, the thickness is 0.76mm, laminate the tempered glass of the back plate and send it into the autoclave for lamination;
[0031] ...
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Abstract
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