Semiconductor device and manufacture method thereof

Abstract

The invention provides a manufacture method of a semiconductor device. The method comprises the following steps: providing a semiconductor substrate, and forming a high-K dielectric layer and a graphical grid on the semiconductor substrate in order; carrying out nitridation on a part of the high-K dielectric layer which is not covered by the grid on the semiconductor substrate; forming a side wall around the grid. Correspondingly, the invention also provides the semiconductor device. In the invention, the part of the high-K dielectric layer which is not covered by the grid or the side wall on the semiconductor substrate is subjected to nitridation, an oxygen diffusion barrier layer is formed at a surface of the high-K dielectric layer, diffusion of oxygen into the high-K dielectric layer under the grid from a horizontal direction is inhibited, the high-K dielectric layer is protected from oxygen erosion, and work performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof which inhibit oxygen from diffusing into a high-permittivity (high-k) gate dielectric layer along a horizontal direction. Background technique [0002] As the size of semiconductor devices continues to scale down, especially when the semiconductor manufacturing process enters below the 90nm technology node, the thickness of the gate oxide layer becomes thinner and thinner. However, when the thickness of the gate oxide layer is less than 10 nm, the increase of the gate leakage current caused by the too thin gate oxide layer will have a worsening effect on the performance of the semiconductor device. [0003] In order to increase the thickness of the gate oxide layer of semiconductor devices and suppress the generation of gate leakage current under the trend of proportional reduction in the size of semico...

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Problems solved by technology

However, the above method directly introduces nitrogen element into the side of the high-k dielectric segment as the gate dielectric layer under the gate, which will reduce the carrier mobility in the channel region of the transistor, and then cause adverse effects on the performance of the entire transistor. influences

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