Method for realizing high-dynamic CMOS (complementary metal-oxide-semiconductor) image sensor

An image sensor, high dynamic technology, applied in the field of image sensors, can solve the problem of reducing the filling rate of pixel units

Active Publication Date: 2012-02-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0007] However, adding transistor M5 and capacitor Cs in a 4T structure CMOS image sensor will reduce the fill factor of the pixel unit
In the prior art, there are many patents and patent applications related to CMOS image sensors, such as the Chinese patent application document with the publication number CN1992305A published on July 4, 2007, but none of them solve the above technical problems

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  • Method for realizing high-dynamic CMOS (complementary metal-oxide-semiconductor) image sensor
  • Method for realizing high-dynamic CMOS (complementary metal-oxide-semiconductor) image sensor
  • Method for realizing high-dynamic CMOS (complementary metal-oxide-semiconductor) image sensor

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Embodiment Construction

[0024] The present invention realizes the high dynamic CMOS image sensor without changing figure 1 shown on the premise of the existing 4T structure CMOS image sensor, that does not utilize the figure 1 Shown in the prior art based on the addition of transistor M5 and capacitor Cs i.e. figure 2 structure shown, but in figure 1 On the basis of the existing 4T structure CMOS image sensor shown, according to the change of the external light intensity, a pulse signal matching the external light intensity is applied to the well area where the floating diffusion area is located. By changing the floating diffusion area and the well area, The potential difference between regions is used to change the junction capacitance of the floating diffusion region, so that the junction capacitance of the floating diffusion region can be changed according to the change of the external light intensity, thereby realizing a high dynamic CMOS image sensor.

[0025] In order to make the above objec...

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Abstract

The invention provides a method for realizing a high-dynamic CMOS (complementary metal-oxide-semiconductor) image sensor. The CMOS image sensor is of a 4T structure. The method comprises the following steps: inputting a first time sequence pulse signal into a resetting transistor; when pulse signals exist, controlling the resetting transistor to open so as to reset a floated diffusion region; and inputting a second time sequence pulse signal into a well region in which the floated diffusion region is positioned, wherein the pulse time of the second time sequence pulse signal is same as that of the first time sequence pulse signal, and the second time sequence pulse signal is matched with the outside light intensity, so that a junction capacitor in the floated diffusion region is a variable capacitor which changes along with the change of the outside light intensity, therefore the purpose of adjusting the junction capacitor of the floated diffusion region along with the outside light intensity is achieved so as to realize the high-dynamic CMOS image sensor.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to a method for realizing a high dynamic CMOS image sensor. Background technique [0002] Image sensors belong to the optoelectronic components in the optoelectronic industry. With the rapid development of digital technology, semiconductor manufacturing technology and the Internet, the market and the industry are now facing the arrival of the era of video, video, and communication integration across various platforms. The beauty of the daily life of future human beings. With its application in daily life, it is undoubtedly a digital camera product, and its development speed can be described as changing with each passing day. In just a few years, digital cameras have developed from hundreds of thousands of pixels to 4 million, 5 million pixels or even higher. Not only in developed European and American countries, digital cameras already occupy a large market, but also in developing Chi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/374
Inventor 饶金华巨晓华周雪梅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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