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20W3dB attenuating piece of aluminium nitride ceramic substrate

A technology of aluminum nitride ceramics and aluminum nitride substrates, applied in electrical components, circuits, waveguide devices, etc., can solve the problem that the attenuation accuracy does not meet the requirements, the impedance and attenuation accuracy deviate from the actual requirements, and the high and low temperature impact resistance performance To improve performance, reduce defective products, and increase resistance to high and low temperature impact performance

Inactive Publication Date: 2012-02-22
苏州市新诚氏通讯电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, due to design reasons, the attenuation accuracy of domestic 20W-3dB attenuators cannot meet the requirements, and the high and low temperature impact resistance is poor. After the high and low temperature impact test is completed, the impedance and attenuation accuracy will deviate from the actual required range.

Method used

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  • 20W3dB attenuating piece of aluminium nitride ceramic substrate
  • 20W3dB attenuating piece of aluminium nitride ceramic substrate

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Embodiment Construction

[0013] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0014] Such as figure 1 As shown, the aluminum nitride ceramic substrate 20W 3dB attenuator includes a 5*5*1MM aluminum nitride substrate 1, the back of the aluminum nitride substrate 1 is printed with a back guide layer, and the front of the aluminum nitride substrate 1 is printed with Wire 2 and resistors R1, R2, R3, resistors R1, R2, R3 are connected by wires to form an attenuation circuit, and the attenuation circuit is electrically connected to the back conductive layer through silver paste, so that the attenuation circuit is grounded and conducted. The attenuation circuit is symmetrical along the center line of the aluminum nitride substrate, the output end of the attenuation circuit is connected to a pad 5, the input end is connected to a pad 6, and the two pads 5, 6 are symmetrical along the center line of the aluminum nitride substra...

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Abstract

The invention discloses a 20W3dB attenuating piece of an aluminium nitride ceramic substrate, comprising a 5*5*1mm aluminium nitride substrate, wherein a back conducting layer is printed on the back surface of the aluminium nitride substrate; wires and resistors are printed on the front surface of the aluminium nitride substrate; the wires are connected with the resistors to form an attenuation circuit which is symmetrical along the central line of the aluminium nitride substrate; the output end and the input end of the attenuation circuit are respectively connected with a bonding pad; and the two bonding pads are symmetrical along the central line of the aluminium nitride substrate. In the attenuating piece, the resistance area is enlarged, so that the high-low temperature impact resistance is enhanced, the quenching damage of high temperature to the resistors is avoided when the output end is welded with a lead, the risk of breaking down in the actual use process due to quenching damage of the resistors is avoided, the performance of the attenuating piece is greatly improved, the situation that the original attenuating piece only can be applied in low frequency is broken, and further the attenuating piece can be applied in 2G-3G networks.

Description

technical field [0001] The invention relates to an aluminum nitride ceramic attenuator, in particular to a 20-watt 3dB attenuator with an aluminum nitride ceramic substrate. Background technique [0002] The attenuator is to attenuate the large voltage signal to a certain proportional multiple (generally referred to as power attenuation) according to the actual requirements to achieve a safe or ideal level value, which is convenient for testing, especially widely used in radio frequency and microwave. At present, most communication base stations are The high-power ceramic load chip is used to absorb the reverse input power in the communication components. The high-power ceramic load chip can only simply consume and absorb excess power, but cannot monitor the working status of the base station in real time. When the base station fails, It is impossible to make a judgment in time and has no protective effect on the equipment. The attenuator can not only absorb the reverse inp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
Inventor 郝敏
Owner 苏州市新诚氏通讯电子股份有限公司
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