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Reflective photomask and reflective photomask blank

A photomask and reflective technology, applied in optics, originals for photomechanical processing, instruments, etc., can solve the problem of half-tone photomasks depending on the transmittance or reflectivity, and achieve the goal of reducing the projection effect Effect

Active Publication Date: 2012-03-07
TOPPAN PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in general, it is difficult to determine the optimum transmittance or reflectance for a halftone photomask as a constant value because it depends on the exposure conditions or the transferred pattern

Method used

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  • Reflective photomask and reflective photomask blank
  • Reflective photomask and reflective photomask blank
  • Reflective photomask and reflective photomask blank

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0106] Such as Figure 11 As shown, the reflective photomask substrate 10 according to the first embodiment of the present invention has: a substrate 1; a multilayer reflective film 2 formed on the substrate 1 and having high reflectivity; a protective film 3 formed on the multilayer reflective The film 2 is used to protect the multilayer reflective film 2; the buffer film 4 is formed on the protective film 3; the absorbing films 5a, 5b are formed on the buffer film 4, have low reflectivity, and have a multilayer structure. Here, the upper absorber film 5b is composed of a film containing Sn and oxygen as main elements. In addition, as described above, the lower absorber film 5 a can function as the buffer film 4 in the mask manufacturing process.

[0107] For the substrate 1 according to the first embodiment of the present invention, a silicon substrate, quartz, titanium-added low thermal expansion glass, etc. can be used, but it is preferable to use a material with a small ...

no. 2 approach

[0117] Such as Figure 13 As shown, the reflective photomask substrate 30 of the second embodiment of the present invention has: a substrate 1; a multilayer reflective film 2 formed on the substrate 1 and having high reflectivity; a protective film 3 formed on the multilayer reflective On the film 2, it is used to protect the multilayer reflective film 2; the buffer film 4 is formed on the protective film 3; the absorption film 5a, 5b, 5c is formed on the buffer film 4, has low reflectivity, and has a multilayer structure. Here, the absorption film 5b is composed of a film containing Sn and oxygen as main elements. In addition, in this case also in the mask manufacturing process, the lower layer absorbing film 5 a can function as the buffer film 4 .

[0118] For the substrate 1 of the second embodiment of the present invention, a silicon substrate, quartz, titanium-added low thermal expansion glass, etc. can be used, but it is preferable to use a material with a small therma...

no. 3 approach

[0125] exist Figure 15 A reflective photomask blank 50 according to the third embodiment of the present invention is shown in FIG. figure 1 The point of difference between the reflective photomask blanks 10 according to the first embodiment of the present invention shown in FIG. In addition, since the description content other than the dual-purpose film 34 overlaps with 1st Embodiment, the description is abbreviate|omitted.

[0126] The dual-purpose film 34 is provided between the lower absorbing film 5a and the multilayer reflective film 2, and this dual-purpose film 34 can function as both the protective film 3 and the buffer film 4 for protecting the multilayer reflective film 2 shown in the first embodiment. role. As a material of such dual-purpose film 34 , for example, a Si film or a silicon nitride film can be used, but the present invention is not limited thereto.

[0127] Next, at Figure 16 In the reflective photomask 60 of the third embodiment of the present in...

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Abstract

A reflective photomask and reflective photomask blank, able to reduce the shadowing effect causing a deterioration phenomenon in the accuracy of transfer by EUV light. The reflective photomask is a photomask for reflecting EUV light and radiating the reflected light, and is provided with a substrate, a high reflection part formed on the substrate, and low reflection parts formed and patterned on the high reflection part, characterized in that the patterned low reflection parts each have at least one stacked layer, and at least one layer of the patterned low reflection part is a layer including Sn and oxygen.

Description

technical field [0001] The present invention relates to a reflective photomask and a reflective photomask blank. [0002] This application claims priority based on Japanese Patent Application No. 2009-089939 filed in Japan on April 2, 2009 and Japanese Patent Application No. 2009-214348 filed in Japan on September 16, 2009, and the above-mentioned patent applications are cited here content. Background technique [0003] In recent years, an exposure method using extreme ultraviolet light (Extreme Ultra Violet, hereinafter abbreviated as "EUV") has been proposed. In EUV exposure, since the wavelength is short, the refractive index of the substance is almost close to the value in vacuum, and the difference in light absorption between materials is also small. Therefore, in the EUV wavelength region, a reflective optical system is used instead of a conventional transmissive refractive optical system, and a reflective photomask is used as a photomask. [0004] General reflectiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/24G03F1/60
CPCG03F1/24B82Y10/00B82Y40/00G03F1/58
Inventor 松尾正
Owner TOPPAN PRINTING CO LTD
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