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Vertical light-emitting diode structure and manufacturing method thereof

A technology of light-emitting diodes and vertical structures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of insufficient adhesion and uneven surface of epitaxial material layers

Active Publication Date: 2013-09-04
HONG KONG APPLIED SCI & TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, before bonding a new master substrate, the surface of the epitaxial material layer will be uneven due to various process steps
When bonding a new substrate to an uneven surface, there will be bond voids, resulting in insufficient bonding and / or stress in the final component

Method used

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  • Vertical light-emitting diode structure and manufacturing method thereof
  • Vertical light-emitting diode structure and manufacturing method thereof
  • Vertical light-emitting diode structure and manufacturing method thereof

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Embodiment Construction

[0015] According to the invention, a metal layer is deposited on epitaxial semiconductor layers, especially those comprising GaN or compound semiconductor materials, which are planarized before bonding a new host substrate to produce vertically structured LEDs. As used herein, "on" means that one layer is on top of another layer, means that it is in direct contact with that layer in one or more places, or it can be separated from the next layer, and the intermediate interval is optional middle layer of material. Figure 1 shows a portion of a monolithic wafer used to fabricate multiple LED chips that will eventually be used in LED components and integrated into lighting fixtures or lighting components. For convenience of description, only a few LED chips are described. exist Figure 1A , there is a first substrate 110 that can support epitaxial growth. Typical substrate materials include sapphire, silicon, aluminum nitride (AlN), silicon carbide (SiC), gallium arsenide (GaAs...

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Abstract

The invention provides a method for manufacturing a composition semiconductor vertical structure LED, comprising the steps of providing a first growth substrate on which the outer extending growth of a composition semiconductor can be supported; forming one or more outer-extending layers of the composition semiconductor material on the first growth substrate, such as GaN or InGaN; forming a plurality of grooves in the composition semiconductor material; depositing a passivation material in one or more grooves; depositing a hard material partially in the groove and depositing the hard material on the composition semiconductor selectively, wherein, the hardness of the hard material is greater than the hardness of the composition semiconductor; depositing a high thermal conductive metal material on the composition semiconductor material, and then flatting the metal material; bonding a new main substrate on a metal layer to remove the first growth substrate; and then cutting to manufacture a separate LED element.

Description

[0001] 【CROSS-REFERENCE TO RELATED APPLICATIONS】 [0002] This application is US Patent Application 61 / 445,516 (Filing Date: February 22, 2011), US Patent Application 12 / 912,727 (Filing Date: October 26, 2010), US Patent Application 11 / 891,466 (Filing Date: 2007 August 10, 2009), U.S. Patent Application No. 12 / 058,059 (filed March 22, 2008), U.S. Patent No. 7,846,753, and continuation-in-part of U.S. Patent Application No. 12 / 415,467 (filed March 31, 2009) case, which is cited and incorporated into this disclosure. 【Technical field】 [0003] The present invention relates to the fabrication of light-emitting diodes (LEDs), and more particularly to the fabrication of vertically structured LEDs and LED devices fabricated therefrom. 【Background technique】 [0004] Vertically structured light-emitting diodes (LEDs) comprising GaN-based materials are becoming increasingly popular as light sources. Typically, a layer of epitaxially grown material comprising GaN is deposited on a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/20
Inventor 林立旻邵向峰
Owner HONG KONG APPLIED SCI & TECH RES INST
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