Magnetic tunnel junction memory unit and manufacturing method thereof

Abstract

The invention relates to a magnetic tunnel junction memory unit and a manufacturing method thereof. The magnetic tunnel junction memory unit comprises a lower electrode, an upper electrode, a magnetic tunnel junction and a side wall structure, wherein the upper electrode is arranged above the lower electrode; the magnetic tunnel junction is sandwiched between the lower electrode and the upper electrode; and the side wall structure is formed on two sides of the magnetic tunnel junction. According to the magnetic tunnel junction memory unit provided by the invention, on the premise that the line width of the magnetic tunnel junction is not increased, the problem of electric connection formed between the upper and lower electrodes caused by defect of a dielectric layer can be overcome, thereby avoiding failure of the magnetic tunnel junction memory unit.

Description

technical field [0001] The invention relates to a semiconductor memory, in particular to a magnetic channel junction (MTJ) storage unit, a magnetic random access memory (MRAM) with the magnetic channel junction storage unit and a manufacturing method of the magnetic channel junction storage unit. Background technique [0002] Magnetic random access memory (Magnetic Random Access Memory, MRAM) is a kind of static random access memory, which has high-speed reading and writing capabilities, and high integration of dynamic random access memory, and can basically be repeatedly written infinitely. The MRAM includes a transistor and a magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) memory cell for storing data. MRAM is a memory device that utilizes the properties of these MTJ cells to write data. [0003] figure 1 A schematic structural diagram of a magnetic channel junction memory cell in the prior art is shown. The magnetic channel junction memory cell 100 includes a ...

AI Technical Summary

Problems solved by technology

This may cause electrical connection between the lower electrode 110 and the subsequently formed upper electrode due to a defect in the dielectric layer, resulting in failure of the magnetic channel junction memory cell

[0007] Therefore, there is a need for a magnetic channel junction memory cell and its manufacturing method, which can overcome the problem of electrical connection between the upper and lower electrodes due to the defect of the dielectric layer without increasing the line width of the magnetic channel junction, thereby avoiding magnetic channel junction memory cell failure

Images