Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof

Abstract

The invention provides a crystal silicon ingot furnace thermal field thermal gate control device and a control method thereof. In the existing thermal field thermal gate control methods, the preliminary radiant quantity maybe excessive to greatly influence the nucleation quality and increase extra energy consumption; the later-period radiant quantity maybe insufficient to cause bad crystal growth continuity and slow growth speed; and the cooling channels may be unevenly symmetric to cause disadvantaged influences to the crystal nucleation and growth. The crystal silicon ingot furnace thermal field thermal gate control device comprises a heat insulation cage, a heater and a heat exchange table, wherein the heater and the heat exchange table are arranged in the heat insulation cage; a cold plate in which cooling water passes through is arranged below the heat insulation cage; and a heat insulation plate assembly, the central opening of which can be opened toward the periphery or closed toward the center in a central symmetric manner, is formed between the cold plate and the bottom of the heat insulation cage. In the invention, a central symmetric opening and closing method is adopted, so that the crystal growth with low energy consumption can be kept, the cooling area can be fully utilized and the preliminary nucleation and stable oriented growth of crystals can be effectively controlled.

Description

[0001] technical field [0002] The invention belongs to the technical field of ingot casting in crystalline silicon ingot furnaces, and relates to a control device for hot spots in the thermal field of crystalline silicon ingot furnaces that adopts center-symmetrical opening and closing. Background technique [0003] Crystalline silicon ingot furnace is a kind of silicon remelting ingot casting equipment, which is an important process equipment for preparing silicon wafers for solar cells. [0004] The quality of the crystal growth system of the crystal silicon ingot furnace is mainly determined by the thermal field in the furnace, and the quality of the thermal field is mainly reflected in the hot structure and control of the thermal field. [0005] An ideal ingot furnace crystal growth system can first produce a critical supercooling degree at the center of the bottom of the crucible so that the melt is preferentially nucleated here, and the formed nuclei are under the jo...

AI Technical Summary

Problems solved by technology

Excessive radiation at the initial stage will greatly affect the quality of nucleation and increase additional energy consumption, such as method 3; insufficient radiation in the later stage will lead to poor continuity and slow growth of crystal growth, such as methods 1 and 2; poor heat dissipation channels Uniform symmetry will also adversely affect crystal nucleation and growth, such as method 4

Images