Deep hole silicon etching method

A deep-hole silicon etching, etching gas technology, applied in decorative arts, gaseous chemical plating, microstructure technology, etc., can solve the problems of reduced through-hole sidewall smoothness, reduced etching efficiency, etc., to achieve good smoothness The effect of reducing the switching time and improving the etching efficiency

Active Publication Date: 2012-04-04
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to avoid the problem that the smoothness of the side wall o

Method used

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  • Deep hole silicon etching method
  • Deep hole silicon etching method

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[0013] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings. figure 2 Shown is the structure diagram of the reaction chamber for plasma etching used in the present invention. The plasma reaction chamber includes a chamber 1, which includes a base for placing a substrate to be processed and a lower electrode 32. Above the lower electrode 32 is a device 34 for fixing the substrate to be processed. The device may be an electrostatic chuck (ESC ). On the electrostatic chuck is a substrate 30 to be processed. The periphery of the substrate 30 also includes an edge ring 36 for adjusting the electric field and temperature distribution at the edge of the substrate. The top of the reaction chamber corresponding to the substrate 30 to be processed includes a gas distribution device 10, such as a gas shower head. The gas shower head...

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Abstract

The invention provides a deep hole silicon etching method, which belongs to the semiconductor manufacture technical field. The method comprises an etching step and a side wall protective layer deposition step which are alternately carried out, the etching step is capable of supplying etching reaction gas to a reaction chamber used for putting the silicon chip to be etched, a silicon layer is etched to form an opening, the side wall protective step is capable of supplying sidewall protection gas, wherein the sidewall protection gas comprises siliceous gas and oxygen-containing gas, a silicon oxide layer is formed at the sidewall and the bottom of the opening. The deep hold sidewall etched by the method of the invention has higher intensity without extra reinforcement step, so that the etching efficiency of entirety is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a through silicon Via (TSV) etching technology, in particular to a method for forming a sidewall protective layer in deep hole silicon etching. Background technique [0002] In the field of semiconductor manufacturing technology, in fields such as MEMS (Micro-Electro-Mechanical Systems, micro-electro-mechanical systems) and 3D packaging technology, it is usually necessary to etch deep via holes in materials such as silicon. For example, in bulk silicon etching technology, deep through-silicon vias (Through-Silicon-Via, TSV) have a depth of hundreds of microns and an aspect ratio much greater than 10, and deep reactive ion etching is usually used to etch the bulk silicon formed. [0003] figure 1 Shown is a schematic diagram of the deep reactive ion etching method in the prior art. In the prior art, the deep reactive ion etching of TSV is usually...

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Application Information

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IPC IPC(8): B81C1/00
Inventor 凯文·皮尔斯
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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