A kind of copper process plasma etching method

Abstract

A plasmaetching method of copper process solves the problem of etching rate deviation resulting from exposing the sputtered copper atoms in the reaction chamber during the etching process. In the process of etching a silicon-contained insulation film until exposing the bottom copper layer, the etching method of this invention retains the original etching gas flow while increasing the flow of oxygen-contained gas during the etching process. After increasing the mixing ratio of oxygen and etching gas, the problem of etching speed deviation due to the copper exposure inside the reaction chamber can be inhibited for achieving long-term, uniform, and stable processing effect.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a plasma etching method for copper process. Background technique [0002] The etching process refers to the process of removing unnecessary parts in the wafer or in the film layer on the surface of the wafer by using chemical solution or corrosive gas or plasma in the process of manufacturing semiconductor devices. Generally, the etching method mainly using chemical solution is wet etching, and the etching method using corrosive gas or plasma is dry etching. At present, dry etching, which can make circuit patterns finer, is more and more widely used. [0003] In wet etching, the chemical reaction of strong acid is used for isotropic etching, even the part covered by the mask can be etched. In contrast, dry etching uses reactive ion etching, in which etching is performed with a corrosive chemical gas, such as a halogen in a plasma, and plasma ions. Therefore, ...

AI Technical Summary

Problems solved by technology

The consistency of etching processing cannot be guaranteed

Images