Plasma etching device

Abstract

The invention relates to plasma etching processing equipment, in particular to a plasma etching device which comprises a first electrode, a second electrode and a driving device, the first electrode and the second electrode are oppositely arranged, and a processing area for placing a workpiece to be processed is arranged between the first electrode and the second electrode. Tips arranged in an array are arranged on the side, close to the second electrode, of the first electrode, the tip portions of the tips point to the second electrode, and the driving device can drive the first electrode to rotate. According to the plasma etching device, the first electrode becomes an electrode with a tip array on the surface, so that the plasma etching device does not need to have too high requirements on power supply voltage during etching, or the energy density of modified particles is greatly improved under the condition of the same power supply voltage. The first electrode can be driven to rotate by using the driving device, so that the to-be-processed workpiece can be driven to rotate within a certain speed range, and a relatively uniform etching effect on the to-be-processed workpiece is realized by matching the first electrode with the tip.

Description

technical field [0001] The invention relates to a plasma etching processing equipment, in particular to a plasma etching device. Background technique [0002] Plasma is the fourth state of matter with unique physical and chemical properties, which can serve the manufacturing industry well. Low-temperature plasma can act on the surface of most inorganic non-metallic materials to achieve chemical etching and surface modification without causing damage to the substrate. It can be used as a non-contact processing method for etching processing or surface modification of semiconductor materials. Subsequent auxiliary processing. Conventional plasma etching technology is mainly used for chip processing in the field of lithography, all using vacuum and low pressure plasma generators, such as reactive ion etching (RIE), inductively coupled plasma (ICP), etc., vacuum and low pressure environments The plasma is easy to be excited, but because of expensive equipment and harsh environme...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a plasma for the problem that it is difficult to realize large-area and uniform glow discharge under atmospheric pressure in the dielectric barrier discharge of the existing flat plate electrode, and it will cause unstable discharge and uneven etching after adding workpieces. Etching device

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