Copper wiring plasma etching method

Abstract

The invention discloses a copper wiring plasma etching method, which resolves the problem of etching speed deviation caused by copper atoms sputtered and exposed to a reaction cavity during etching. During etching of a silicon-contained insulating layer until exposure of a lower copper layer, original etching gas flow can be maintained while oxygen-contained gas flow is increased during etching by the copper wiring plasma etching method. After mixing ratio of oxygen and etching gas is increased, the problem of etching speed deviation caused by copper exposed into the reaction cavity is resolved, and long-term, uniform and stable processing effects can be obtained more easily.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a plasma etching method for copper process. Background technique [0002] The etching process refers to the process of removing unnecessary parts in the wafer or in the film layer on the surface of the wafer by using chemical solution or corrosive gas or plasma in the process of manufacturing semiconductor devices. Generally, the etching method mainly using chemical solution is wet etching, and the etching method using corrosive gas or plasma is dry etching. At present, dry etching, which can make circuit patterns finer, is more and more widely used. [0003] In wet etching, the chemical reaction of strong acid is used for isotropic etching, even the part covered by the mask can be etched. In contrast, dry etching uses reactive ion etching, in which etching is performed with a corrosive chemical gas, such as a halogen in a plasma, and plasma ions. Therefore, ...

AI Technical Summary

Problems solved by technology

The consistency of etching processing cannot be guaranteed

Images