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Forming method for through holes of semiconductor devices

A semiconductor and device technology, which is applied in the field of through-hole formation of semiconductor devices, can solve problems such as the instability of through-hole resistance, achieve the effects of improving product yield and reliability, changing water absorption performance, and improving poor contact between metal layers

Inactive Publication Date: 2012-04-04
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The inventors found that the existing semiconductor device through-holes have the problem of unstable resistance

Method used

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  • Forming method for through holes of semiconductor devices
  • Forming method for through holes of semiconductor devices
  • Forming method for through holes of semiconductor devices

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Embodiment Construction

[0015] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0016] The method for forming a through hole of a semiconductor device according to the first embodiment of the present invention can improve the uniformity of the resistance of the through hole. The structure of the through hole of the semiconductor device described in this embodiment can be found in figure 1 , the specific method for forming the through hole, see figure 2 , including the following steps:

[0017] 11. Depositing a dielectric layer includin...

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Abstract

An embodiment of the invention discloses a forming method for through holes of semiconductor devices, which relates to the technical field of semiconductor manufacturing and is designed for improving uniformity of resistance of the through holes. The forming method includes steps of depositing a medium layer containing a spin coating glass layer onto a first metal layer of a semiconductor device, etching the medium layer containing the spin coating glass layer to form an original through hole, baking the semiconductor device with the original through hole, and depositing a conductive layer on the surface of the medium layer of the baked semiconductor device to form a through hole. The forming method is used for forming through holes of semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a through hole of a semiconductor device. Background technique [0002] With the development of semiconductor technology, a semiconductor integrated circuit includes a large number of semiconductor devices arranged on one substrate. In such semiconductor integrated circuits, the use of a single-layer internal connection layer is no longer sufficient to meet the needs of the internal connection of semiconductor devices on the substrate. Therefore, in the actual semiconductor integrated circuit, a multi-layer interconnection structure is set on the substrate, and an insulating film is inserted between each layer. Among them, the through hole is used as the interconnection between the multi-layer metal layers and the connection between the active area of ​​the device and the external circuit. Due to its important role in the composition of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 席华萍陈建国贺冠中
Owner PEKING UNIV FOUNDER GRP CO LTD
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