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III nitride MISHEMT device

A technology of nitrides and devices, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unsatisfactory effects

Inactive Publication Date: 2013-09-25
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method of suppressing current collapse is not ideal in the case of high current and high voltage

Method used

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Embodiment Construction

[0019] refer to Figure 2a The reason for the current collapse phenomenon of ordinary MISHEMT devices (taking AlGaN / GaN devices as an example) is that in the off state of the device, negative charges will be accumulated at the interface between the AlGaN layer 3 and the insulating dielectric layer 9 on both sides of the gate metal 4 to form negative charges In the accumulation region 21 , due to electrostatic induction, these negative charges will reduce or even completely deplete the two-dimensional electron gas in the lower channel region, forming a channel depletion region 22 . When the gate voltage rises and the device transitions from the off state to the on state, the two-dimensional electron gas under the gate rises under the control of the gate voltage, and the channel under the gate is turned on, but the negative charges in the interface charge accumulation region are relatively low The deep energy level cannot be released in time, so the two-dimensional electron gas ...

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Abstract

The invention discloses an III nitride MISHEMT device, which comprises source and drain electrodes, main and secondary grids, first and second medium layers and a heterostructure; the source and drain electrodes are electrically connected through two-dimensional electron gas formed in the heterostructure; the heterostructure comprises first and second semiconductors; the first semiconductor is arranged between the source and drain electrodes; the second semiconductor is formed on the surface of the first semiconductor and is provided with a band gap wider than the first semiconductor; the first medium layer is arranged on the surface of the second semiconductor and forms a metal insulation layer semiconductor contact (MIS) along with the second semiconductor and the main grid; the second medium layer is arranged on the surfaces of the first medium layer and the main grid and forms electric isolation for the main grid and the secondary grid; the main grid is arranged at one side of the surface of the first medium layer close to the source electrode; and the secondary grid is formed on the surface of the second medium layer, and at least one side edge of the secondary grid is extended to the direction of the source electrode or the drain electrode, and meanwhile orthographic projection of the secondary grid is overlapped with the two side edges of the main grid. The ''current collapse effect'' can be substantially and effectively inhibited by the III nitride MISHEMT device.

Description

technical field [0001] The invention relates to a metal-insulator-semiconductor high electron mobility transistor (Metal-Insulator-Semiconductor High Electron Mobility Transistor, MISHEMT), in particular to a group III nitride MISHEMT device. Background technique [0002] When MISHEMT devices use Group III nitride semiconductors, due to piezoelectric polarization and spontaneous polarization effects, a high-concentration two-dimensional electron gas can be formed on a heterostructure (such as: AlGaN / GaN). In addition, MISHEMT devices use group III nitride semiconductors, which can obtain high insulation breakdown electric field strength and good high temperature resistance characteristics. MISHEMTs with heterostructured Group III nitride semiconductors can be used not only as high-frequency devices, but also as high-voltage / high-current power switching devices. [0003] When the existing Group III nitride semiconductor HEMT devices are used as high-frequency devices or high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/78H01L29/423
Inventor 蔡勇于国浩董志华王越张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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