A p-type buried layer algan-gan high electron mobility transistor

Abstract

An AlGaN-GaN high-electron mobility transistor with a P-type buried layer comprises a Si-based substrate, wherein an AlN nucleating layer is formed on the Si-based substrate, an intrinsic GaN layer is formed on the AlN nucleating layer, an AlGaN doping layer is formed on the intrinsic GaN layer, a gate oxide layer is formed on an upper surface of the AlGaN doping layer, a gate is formed on an upper surface of the gate oxide layer, a passivation layer covers the AlGaN doping layer and the gate, a source is formed at one side of the gate, a drain is formed at the other side of the gate, the source and the drain extend form an upper part of the intrinsic GaN layer, penetrate through the AlGaN doping layer and are stopped in the passivation layer, the AlGaN-GaN high-electron mobility transistor is characterized in that a P-type AlGaN doping region buried layer is formed in the AlN nucleating layer, an upper surface of the P-type AlGaN doping region buried layer is in contact with a lower surface of the intrinsic GaN layer, a boundary of the P-type AlGaN doping region buried layer is arranged below the gate, and the other boundary of the P-type AlGaN doping region buried layer is arranged below a region between the gate and the drain.

Description

technical field [0001] The invention mainly relates to a wide bandgap material power semiconductor device, in particular to an AlGaN-GaN high electron mobility transistor used in the field of power switches. Background technique [0002] GaN material has good electrical properties, such as wide band gap, high breakdown electric field, high thermal conductivity, corrosion resistance, etc. The third-generation semiconductor material after the material is an ideal material for making high-frequency, high-voltage, high-temperature, high-power electronic devices and short-wavelength, high-power optoelectronic devices. [0003] AlGaN-GaN high electron mobility transistor Due to the spontaneous polarization effect, a high concentration of two-dimensional electron gas (2DEG) appears in the GaN layer at the AlGaN-GaN interface, so the AlGaN-GaN high electron mobility transistor has an electron drift speed Fast advantage. Since the AlGaN-GaN high electron mobility transistor also ha...

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Problems solved by technology

The existing methods of increasing the barrier height of the AlN nucleation layer, such as increasing the Al composition of the AlN nucleation layer, can effectively suppress the current collapse effect, but at the same time, this method will reduce the 2DEG concentration of the device, which will reduce the current capability of the device

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