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Exposure method adopting lithography machine

An exposure method and technology of lithography machine, applied in the field of lithography machine exposure, can solve problems such as chip deformation, and achieve the effect of the best process registration progress

Active Publication Date: 2012-04-11
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

from image 3 It can be seen from the actual measurement data that the chip after exposure has undergone serious deformation.

Method used

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  • Exposure method adopting lithography machine
  • Exposure method adopting lithography machine
  • Exposure method adopting lithography machine

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Embodiment Construction

[0026] Embodiments of the present invention will be described in detail below. It should be noted that the embodiments described here are for illustration only, and are not intended to limit the present invention.

[0027] Figure 4 Exemplary shows the flow chart of the exposure method of the lithography machine of the present invention, including

[0028] Step 101, transfer the silicon wafer to the silicon wafer loading stage.

[0029] Step 102, turn on the vacuum equipment to make the silicon wafer carrier absorb the silicon wafer.

[0030] Step 103 , perform alignment, and expose the chips on the silicon wafer in batches, wherein the chips are exposed at intervals on the exposure path during each batch of exposure.

[0031] The implementation process of the exposure method for the lithography machine of the present invention will be described in detail below.

[0032] If the traditional continuous exposure method is adopted, the exposed chip will be deformed due to high...

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Abstract

The invention discloses an exposure method adopting a lithography machine. The method comprises the following steps of: 101. transferring silicon wafers to a silicon wafer carrying stage; 102. opening vacuum equipment to ensure the silicon wafer carrying stage to attract the silicon wafers; and 103. aligning the silicon wafers and exposing the chips on the silicon wafers in batches, wherein the chips are exposed at intervals in the exposure path during exposure of each batch. The method provided by the invention has the following beneficial effects that: the high temperature chips can be ensured to be cooled so that deformation can not be transferred to the adjacent chips; a better process alignment progress can be obtained; and high homogeneity between silicon wafers and between batches can be realized in the continuous working process of the lithography machine.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to an exposure method for a photolithography machine. Background technique [0002] At present, with the continuous improvement of integrated circuit manufacturing technology and the continuous shrinking of line width in lithography technology, the area of ​​semiconductor devices is becoming smaller and smaller. The layout of semiconductors has evolved from ordinary single-function separation devices to integrated high-density multi-functional Integrated circuits; from the initial integrated circuit (Integrated Circuit, referred to as IC) to large scale integrated circuit (Large Scale Integration, referred to as LSI), very large scale integrated circuit (Very Large Scale Integration, referred to as VLSI), until today's ultra-large scale Integrated circuit (Ultra Large Scale Integration, referred to as ULSI), the area of ​​the device is further reduced, and the function is more comprehensi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F7/22
Inventor 朱骏陈力钧
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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