Exposure method adopting lithography machine

Abstract

The invention discloses an exposure method adopting a lithography machine. The method comprises the following steps of: 101. transferring silicon wafers to a silicon wafer carrying stage; 102. opening vacuum equipment to ensure the silicon wafer carrying stage to attract the silicon wafers; and 103. aligning the silicon wafers and exposing the chips on the silicon wafers in batches, wherein the chips are exposed at intervals in the exposure path during exposure of each batch. The method provided by the invention has the following beneficial effects that: the high temperature chips can be ensured to be cooled so that deformation can not be transferred to the adjacent chips; a better process alignment progress can be obtained; and high homogeneity between silicon wafers and between batches can be realized in the continuous working process of the lithography machine.

Description

technical field

[0001] The invention relates to semiconductor technology, in particular to an exposure method for a photolithography machine. Background technique

[0002] At present, with the continuous improvement of integrated circuit manufacturing technology and the continuous shrinking of line width in lithography technology, the area of ​​semiconductor devices is becoming smaller and smaller. The layout of semiconductors has evolved from ordinary single-function separation devices to integrated high-density multi-functional Integrated circuits; from the initial integrated circuit (Integrated Circuit, referred to as IC) to large scale integrated circuit (Large Scale Integration, referred to as LSI), very large scale integrated circuit (Very Large Scale Integration, referred to as VLSI), until today's ultra-large scale Integrated circuit (Ultra Large Scale Integration, referred to as ULSI), the area of ​​the device is further reduced, and the function is more comprehensi...

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