Bit-level twin-port nonvolatile static random access memory and implementation method thereof

A static random access, non-volatile technology, applied in static memory, read-only memory, digital memory information, etc., can solve the problem that NVSRAM cannot be realized through the bit level, and achieve the effect of shortening storage time and simple control circuit

Active Publication Date: 2012-04-11
SHANGHAI XINCHU INTEGRATED CIRCUIT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention overcomes the defect that NVSRAM cannot be realized through the bit level in the prior art, and proposes a bit-level dual-port non-volatile static random access memory and its realization method

Method used

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  • Bit-level twin-port nonvolatile static random access memory and implementation method thereof
  • Bit-level twin-port nonvolatile static random access memory and implementation method thereof
  • Bit-level twin-port nonvolatile static random access memory and implementation method thereof

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Embodiment Construction

[0037] The present invention will be described in further detail in conjunction with the following specific examples and accompanying drawings, and the protection content of the present invention is not limited to the following examples. Without departing from the spirit and scope of the inventive concept, changes and advantages conceivable by those skilled in the art are all included in the present invention, and the appended claims are the protection scope.

[0038] Such as Figure 1-2, 1-PMOS transistor, 2-PMOS transistor, 3-NMOS transistor, 4-NMOS transistor, 5-NMOS transistor, 6-NMOS transistor, 7-NMOS transistor, 8-NMOS transistor, 9-NMOS transistor, 10-NMOS transistor , 11-Phase-change resistor, 12-Phase-change resistor, 13-Dual-port static storage unit, 14-Phase-change storage unit, 15-Phase-change storage unit, 16-Dual-port non-volatile static storage unit, 20-Dual Non-volatile static memory cell array, 21-word line decoder, 22-bit line decoder, 23-precharge circuit,...

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Abstract

The invention discloses a bit-level twin-port nonvolatile static random access memory, which comprises a twin-port nonvolatile static memory cell array, a word line decoder, a bit line decoder, a precharging circuit, a demultiplexer, a reading circuit and a writing circuit, wherein the twin-port nonvolatile static memory cell array is connected with the word line decoder through a normal read-write word line and a memory and recovery control word line, and is connected with the bit line decoder and the precharging circuit through a bit line and a reverse bit line; the demultiplexer is connected with the bit line decoder through data bus, and the reading circuit and the writing circuit are respectively connected with the demultiplexer; and the twin-port nonvolatile static memory cell array comprises twin-port nonvolatile static memory cells. The bit-level twin-port nonvolatile static random access memory provided by the invention has capabilities of bit level memory and data recovery and a simple control circuit, and recovery time after the system is powered down is greatly shortened.

Description

technical field [0001] The invention relates to a static memory, in particular to a bit-level non-volatile static random access memory and its realization method. Background technique [0002] Memory is an important part of the semiconductor industry. In recent years, with the rapid growth of the consumer electronics market, the market for memory is getting bigger and bigger. Currently, mainstream memories on the market include static random access memory (SRAM), dynamic random access memory (DRAM) and flash memory (FLASH), and these memories play an important role in various aspects. [0003] As we all know, in the field of non-volatile memory, the market heat is rising. Recently, the static random access memory (SRAM) family has added a new member, non-volatile SRAM (Non-volatile SRAM), which has the advantages of both SRAM and FLASH, and is mainly used to save important data that cannot be lost when power is off. Wide range of applications. For example, network communi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/24
CPCG11C14/009G11C8/16
Inventor 亢勇陈邦明
Owner SHANGHAI XINCHU INTEGRATED CIRCUIT
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