Bit-level twin-port nonvolatile static random access memory and implementation method thereof

Abstract

The invention discloses a bit-level twin-port nonvolatile static random access memory, which comprises a twin-port nonvolatile static memory cell array, a word line decoder, a bit line decoder, a precharging circuit, a demultiplexer, a reading circuit and a writing circuit, wherein the twin-port nonvolatile static memory cell array is connected with the word line decoder through a normal read-write word line and a memory and recovery control word line, and is connected with the bit line decoder and the precharging circuit through a bit line and a reverse bit line; the demultiplexer is connected with the bit line decoder through data bus, and the reading circuit and the writing circuit are respectively connected with the demultiplexer; and the twin-port nonvolatile static memory cell array comprises twin-port nonvolatile static memory cells. The bit-level twin-port nonvolatile static random access memory provided by the invention has capabilities of bit level memory and data recovery and a simple control circuit, and recovery time after the system is powered down is greatly shortened.

Description

technical field [0001] The invention relates to a static memory, in particular to a bit-level non-volatile static random access memory and its realization method. Background technique [0002] Memory is an important part of the semiconductor industry. In recent years, with the rapid growth of the consumer electronics market, the market for memory is getting bigger and bigger. Currently, mainstream memories on the market include static random access memory (SRAM), dynamic random access memory (DRAM) and flash memory (FLASH), and these memories play an important role in various aspects. [0003] As we all know, in the field of non-volatile memory, the market heat is rising. Recently, the static random access memory (SRAM) family has added a new member, non-volatile SRAM (Non-volatile SRAM), which has the advantages of both SRAM and FLASH, and is mainly used to save important data that cannot be lost when power is off. Wide range of applications. For example, network communi...

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Problems solved by technology

[0006] The present invention overcomes the defect that NVSRAM cannot be realized through the bit level in the prior art, and proposes a bit-level dual-port non-volatile static random access memory and its realization method

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