Manufacturing method of TFT (Thin Film Transistor) array substrate and TFT array substrate

Abstract

The invention discloses a manufacturing method of a TFT (Thin Film Transistor) array substrate; the manufacturing method comprises the following steps of: depositing a first metallic membrane layer on a substrate; and carrying rubber coating exposure development process on the first metallic membrane layer, and obtaining a light blocking metal through etching and rubber removal. The invention also provides the TFT array substrate comprising a glass substrate and a first insulating layer; the TFT array substrate also comprises the light blocking metal formed on the glass substrate; and the light blocking metal is obtained by carrying out rubber coating exposure development process on the first metallic membrane layer deposited on the glass substrate through corrosion and rubber removal. According to the manufacturing method of the TFT (Thin Film Transistor) array substrate provided by the invention, TFT switching devices are protected by forming the light blocking metal on the substrate and is not affected by highlights, thereby the stability of the TFT switching devices is increased; and the area of a storage capacitor is reduced through the parallel connection of capacitors, thereby the purpose of increasing the aperture ratio of a corresponding pixel is realized.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a manufacturing method of a TFT array substrate and the TFT array substrate. Background technique [0002] While the TFT liquid crystal display is widely used and attracts more and more attention from people, the requirement for the display quality of the TFT liquid crystal display is also getting higher and higher. At present, the manufacture of TFT liquid crystal display array substrates usually adopts 5Mask technology, including gate electrode lithography (Gate Mask), active layer lithography (ActiveMask), source and drain lithography (S / D Mask), via hole lithography (Via Hole Mask) and the 5Mask technology of pixel electrode layer lithography (Pixel Mask), and each Mask process step includes one or more thin film deposition processes and etching processes, forming 5 thin film deposition → photolithography →The cyclic process of etching. However, using this traditional ...

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Problems solved by technology

However, using this traditional 5Mask technology to manufacture the TFT liquid crystal display array substrate, the TFT switching device is not protected during the exposure process, making it vulnerable to strong light, thereby reducing the stability of the TFT switching device; and , the existing storage capacitor, if you want to increase the capacitance value, you need to increase the area of ​​the storage capacitor, which will lead to a decrease in the aperture ratio of the corresponding pixel

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