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On-line circuit aging prediction method based on measuring electric leakage change

An aging prediction and circuit technology, applied in the field of semiconductor technology, can solve the problems of non-critical paths exceeding aging sensors, circuit aging, etc.

Active Publication Date: 2012-05-02
INST OF COMPUTING TECH CHINESE ACAD OF SCI
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Problems solved by technology

Therefore, under the influence of severe noise, even the delay deviation of some non-critical paths will exceed the alarm threshold of the aging sensor, and thus be mistaken as the result of circuit aging

Method used

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  • On-line circuit aging prediction method based on measuring electric leakage change
  • On-line circuit aging prediction method based on measuring electric leakage change
  • On-line circuit aging prediction method based on measuring electric leakage change

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Embodiment Construction

[0048] Through the research, it is found that the threshold voltage of the PMOS transistor will increase with the lapse of operation time due to the NBTI effect, but the static leakage of the gate (mainly the subthreshold leakage) will decrease accordingly. Therefore, the change of static leakage of the circuit can be used to characterize the aging of the circuit due to the NBTI effect. Unlike the method of monitoring the delay variation, measuring the leakage variation can be realized through an independent test mode when the circuit is idle, thereby avoiding the influence of real-time noise on the measurement results. At the same time, the static leakage measurement technology (IDDQ) is relatively mature, so the implementation complexity is relatively low.

[0049] One method to characterize circuit aging by using the change of circuit static leakage is to establish the change of circuit leakage and the change of time delay (under the action of aging effect, the time delay o...

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Abstract

The invention provides an on-line circuit aging prediction method based on measuring electric leakage change. The method comprises the following steps: (1) when a circuit is idle, applying a plurality of measurement vectors to a key door of a key pathway, and obtaining linear equations corresponding to electric leakage change of all key doors of all measurement vectors; (2) combining the linear equations to form an electric leakage change linear equation group of the key door; (3) solving the electric leakage change linear equation group of the key door, and obtaining all key door electric leakage variation, wherein, electric leakage change variation of one key pathway is a sum of electric leakage variation of all key doors; (4) according to correlation between electric leakage variation and time delay variation of the key pathway, predicting aging of the key pathway caused by an NBTI effect. Through measuring electric leakage change, aging of a circuit caused by the NBTI effect is predicted, and influence of real-time noise generated in a circuit execution function operation on measurement precision is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to an online circuit aging prediction method based on measuring leakage changes. Background technique [0002] As process technology enters the nanometer scale, transistor feature sizes continue to decrease. In this case, NBTI (Negative Bias Temperature Instability), an aging effect on PMOS transistors, becomes the primary factor affecting circuit lifetime reliability. The NBTI effect increases the latency of a circuit over time, causing timing violations in the circuit. Some research work has shown that in the worst operating environment, the NBTI effect can cause a circuit delay to increase by 20% within 10 years. Since circuit aging is a relatively slow process, online circuit aging prediction is an effective method to predict circuit failure caused by aging effects. [0003] Some existing online circuit aging prediction methods are based on the principle of d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28
Inventor 韩银和靳松李华伟李晓维
Owner INST OF COMPUTING TECH CHINESE ACAD OF SCI
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