Method for programming low-voltage quick non-volatile memory

Abstract

The invention relates to a low-voltage-based quick non-volatile memory and a programming method. During the programming process, a forward voltage is applied to a control electrode to supply an electron injection electric field, a source electrode and a drain electrode are grounded, a deep N well is grounded, and the voltage of a P well is controlled to reduce gradually so as to realize the programming of a part; the forward voltage V9p is applied to the control electrode to supply the electron injection electric field, the grounding voltage of the source electrode is Vsp, the grounding voltage of the drain electrode is Vdp, the grounding votlage of the deep N well is Vnp, and the voltage of the P well is controlled to change from a high voltage to a low voltage so as to realize the programming of the part; the voltage Vp1 which is applied to the P well is high, so both a bottom node pn and a source-drain node pn stay at a forward voltage bias state, and since the bottom node pn stays at a forward bias state, an obvious electronic current can move from the deep N well to the P well, and electrons are also injected to the P well in the source-drain area; and the electrons enter a floating gate in a therma electron way, so the operation voltage is low, the programming current is large, and the low-voltage quick programming effect can be realized.

Description

technical field [0001] The invention relates to a programming method for a semiconductor non-volatile memory, in particular to a fast and effective low-voltage programming method based on a multi-well floating gate structure. Background technique [0002] As a non-volatile storage device, flash memory has developed rapidly since its invention. As a typical representative of fast storage, it has played a very good application value in fields such as digital cameras, U disks, and mobile phones. Floating gate type The flash memory cell with the structure has been widely used in the field of non-volatile memory, especially the floating gate structure of the multi-well process. The floating gate structure of the multi-well process includes double-well process, triple-well process, etc., such as figure 1 A common structure is shown, which includes a P-type substrate 0, implanted into the P-type substrate to form a deep N well 1, and in the deep N well again implanted to form a P w...

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Problems solved by technology

like figure 2 This mode of operation is shown. This programming mode has low current and high efficiency, but this mode of operation requires sufficient tunneling electric field, so a high operating voltage is required, which brings inconvenience during the design process.

Moreover, the oxide layer defects caused by tunneling can also easily lead to some reliability problems.

Another important form of programming is the channel hot singleton injection method CHE (such as image 3 ), during the operation, a voltage of more than 4V is added to the source and drain, and the gate voltage is about 9V. During the operation of the channel, under the action of the lateral electric field of the gate voltage, if the energy is higher than the potential barrier of the underlying dielectric, the electrons can cross the dielectric. When the layer barrier height enters the floating gate, there will be a large current at the drain terminal during the programming process, and only a small part of the electrons in the current can enter the floating gate storage layer, so the efficiency is not high

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