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Component structure for detecting filling ability of pre-metal dielectric

A technology of pre-metal dielectric and device structure, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of sample production failure and waste, and achieve convenient and efficient detection, convenient production, and simple structure Effect

Active Publication Date: 2012-05-09
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The direction of sample preparation is usually perpendicular to poly, so it is unpredictable that the cross section falls on the active area or isolation oxide, which will easily cause sample fabrication failure and waste

Method used

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  • Component structure for detecting filling ability of pre-metal dielectric
  • Component structure for detecting filling ability of pre-metal dielectric
  • Component structure for detecting filling ability of pre-metal dielectric

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0023] Such as Figures 3 to 5 As shown in the cross-section of the device structure used to detect the filling ability of the pre-metal dielectric of the present invention includes a plate figure 1 , 2 and 3.

[0024] Such as image 3 As shown in the version of the embodiment of the present invention figure 1 Composed of substrate 4 and gate 5, the plate formed in this way figure 1 The active area density is 100%;

[0025] Such as Figure 4 As shown in the version of the embodiment of the present invention figure 2 STI structure 6 is formed on the substrate 4, version figure 2 The gate 5 on the top is perpendicular to the STI6. another example Figure 4 As shown in the plate formed in this example figure 2 The active area density is 50%;

[0026] Such as Figure 5 As shown in the version of the embodiment of the present invention image 3 Composed of STI6 and gate 5, the plate formed in this way image 3 The active area density is 0%.

[0027] The cross-sect...

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PUM

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Abstract

The invention provides a component structure for detecting filling ability of pre-metal dielectric, which comprises a substrate, an STI (shallow trench isolation) and a grid. A cross section of the component structure comprises a layout 1 which is composed of the substrate and the grid; a layout 2, wherein the STI structure is formed on the substrate of the layout 2, the grid of the layout 2 is vertical to the STI; and a layout 3 which is composed of the STI and the grid. The component structure for detecting the filling ability of the metal former medium is conveniently manufactured, and hasa simple structure; and the section has different substrate layout densities, and density in different substrate activity areas can be detected on the grid fill; and the component structure can conveniently and efficiently detect the filling ability of a PMD(pre-metal dielectri) gap.

Description

technical field [0001] The invention relates to a device structure used for detection, in particular to a device structure used for detecting the filling ability of a pre-metal dielectric. Background technique [0002] The filling capability of the PMD (pre-metal dielectric filling) process is very critical in process integration. If the filling is insufficient and there are voids, it is easy to cause circuit conduction in the subsequent process integration, resulting in yield loss. It is therefore very important to effectively monitor the fillability of existing processes. [0003] At present, the most commonly used method to detect the filling ability is to make a cross-sectional sample at the specified figure (device structure), and then observe the filling result on the SEM (scanning electron microscope) or TEM (transmission electron microscope) microscope. Device structures currently specified for monitoring PMD fill capability typically employ SRAM regions (such as f...

Claims

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Application Information

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IPC IPC(8): H01L23/544H01L27/02G01N23/22G01N23/02
Inventor 郑春生张文广徐强陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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