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Semiconductor apparatus and manufacturing method for same

A semiconductor and n-type semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as low die size utilization, increased cost, and large die area

Active Publication Date: 2014-07-02
CHENGDU MONOLITHIC POWER SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the fully diffused p-type well, due to its deep junction, it needs to occupy a large die area for forming a large-sized p-type well, which reduces the power area ratio of the device
For additional deeper p-type wells, additional masking and thermal diffusion processes are required, which complicates the manufacturing process and increases costs
Moreover, the semiconductor devices of the above two structures have low die size utilization

Method used

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  • Semiconductor apparatus and manufacturing method for same
  • Semiconductor apparatus and manufacturing method for same
  • Semiconductor apparatus and manufacturing method for same

Examples

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Embodiment Construction

[0021] Exemplary embodiments of the present invention are described more fully hereinafter with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein.

[0022] The Figures are idealized schematic illustrations of exemplary embodiments and / or intermediate structures. It is to be understood that variations from the shapes of the illustrations, eg, due to manufacturing techniques and / or tolerances, are to be expected. Thus, exemplary embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and / or a gradient of implant concentration at its edges rather than a binary change from implanted to non...

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a trench-type metal oxide semiconductor field effect transistor formed in an n-type semiconductor substrate; an integrated Schottky diode located next to the metal oxide semiconductor field effect transistor and including the n-type an anode metal layer contacted by the semiconductor substrate; and a trench isolation structure positioned between the MOSFET and the Schottky diode, thereby blocking the p-type well doped region of the MOSFET A part of the Schottky diode is diffused toward the Schottky diode, wherein the p-type well doped region has a protruding portion laterally diffused under the trench isolation structure into a partial region of the Schottky diode close to the trench isolation structure.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, more specifically, to a semiconductor device integrating a trench type metal oxide semiconductor field effect transistor (Trench MOSFET) and a Schottky diode (Schottky diode) and a manufacturing method thereof. Background technique [0002] In today's electronic devices, multiple power supplies are widely used. For example, in some applications, the central processing unit is designed to operate with different supply voltages at certain times depending on the computational load. Therefore, a DC / DC converter (DC / DC convert) is used to meet the wide range power supply requirements of the circuit. DC / DC converters typically employ high-efficiency switching implemented with trench-type power metal-oxide-semiconductor field-effect transistors (MOSFETs). [0003] In a conventional DC / DC converter circuit, in order to avoid damage to the MOSFET caused by a shoot-thro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L29/06H01L21/822H01L21/762
CPCH01L27/0629H01L29/0649H01L29/7806H01L21/76224H01L29/7813H01L29/0696H01L29/0653H01L29/1095H01L29/66734
Inventor 张磊李铁生
Owner CHENGDU MONOLITHIC POWER SYST
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