Semiconductor apparatus and manufacturing method for same
A device manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limiting the performance of semiconductor devices
Active Publication Date: 2012-05-16
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, the disadvantage of this is that it can only provide limited tensile or compressive stress (in the range of about 200 MPa to about 500 MPa), which greatly limits the performance of the resulting semiconductor device
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[0017] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, and unnecessary details and functions for the present invention will be omitted during the description to avoid confusing the understanding of the present invention.
[0018] In the present invention, a strained phase change material (stressed Phase Change Material, PCM) is used to increase the tensile or compressive stress that can be provided to the channel region of the semiconductor device. First, in the shallow trench isolation (STI) region used to isolate different devices located in the gate length direction, the PCM part is formed in an unstrained phase; then, the PCM part is converted from the unstrained phase through a phase change process It is the strain phase (volume increase or contraction), which causes the PCM part to generate compressive or tensile stress on other surrounding structures.
[0019] Phase change materials are we...
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Abstract
The invention discloses a method for manufacturing a semiconductor apparatus, comprising forming a groove for isolating different devices in a gate longitudinal direction on a substrate; forming a liner on an inner wall of the groove; depositing phase change materials in the groove; performing a phase change treatment to the phase change materials so as to form strain phase materials, thereby applying a tensile stress or a pressure stress to the substrate so as to make the substrate to generate tensile strain or pressure strain; forming a grid on the substrate; performing again the phase change treatment to the phase change materials so as to ensure the phase change materials to form the strain phase change materials; and forming a source silicide and a drain silicide on both sides of the grid. In the invention, a phase-change material is formed in a shallow groove isolation area. A large deformation stress can be generated via the volume change or density change generated when the phase-change material has a phase change, thereby enhancing the performance of the semiconductor apparatus.
Description
technical field [0001] The present invention relates to the field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device including a strained phase change material (stressed Phase Change Material (PCM)) and a manufacturing method thereof. Background technique [0002] Mechanical strain in semiconductor device substrates can be used to alter the performance of semiconductor devices. For example, in a Si substrate, when the Si substrate layer is in a compressive strain state, the hole mobility will be improved; conversely, when the Si substrate layer is in a tensile strain state, the electron mobility will be improved. Therefore, advantageously, tensile stress (n-type semiconductor device) or compressive stress (p-type semiconductor device) can be generated in the substrate layer region of the semiconductor device to enhance the performance of the n-type or p-type semiconductor device. [...
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IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/762
Inventor 朱慧珑尹海洲骆志炯
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI