LED (light emitting diode) and manufacturing method thereof

Abstract

The invention relates to an LED (light emitting diode) which comprises a substrate, a first n-type gallium nitride layer, a connection layer, a second n-type gallium nitride layer, a light-emitting layer, a p-type gallium nitride layer, a p-type electrode and an n-type electrode, wherein the first n-type gallium nitride layer is formed on the substrate, and is provided with a first surface far away from the substrate; the first surface comprises a first region and a second region; the connection layer, the second n-type gallium nitride layer, the light-emitting layer, the p-type gallium nitride layer and the p-type electrode are sequentially formed on the first region; the n-type electrode is formed on the second region; the connection layer can be etched by an alkali solution; the bottom surface of the second n-type gallium nitride layer facing to the connection layer is reverse polarization gallium nitride, and the bottom surface of the second n-type gallium nitride layer is provided with an exposed roughening surface. The invention also relates to a manufacturing method of the LED.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] Now, light emitting diodes (Light Emitting Diode, LED) have been widely used in many fields. However, the light generated by the LED can only be emitted to the outside world when the angle is smaller than the critical angle. Otherwise, due to the internal total reflection, a large amount of light will be lost inside the LED and cannot be emitted to the outside world, resulting in a low light output rate of the LED. Low, not high brightness. At present, the technology of using etching to roughen the surface of LEDs to increase the brightness of LEDs is well known to the public. The existing technologies are roughly divided into two types: 1. Using high-temperature acidic liquids (such as sulfuric acid, phosphoric acid, etc.) to treat LEDs The disadvantage of etching is that the etching rate is unst...

AI Technical Summary

Problems solved by technology

However, the light generated by the LED can only be emitted to the outside world when the angle is smaller than the critical angle. Otherwise, due to the internal total reflection, a large amount of light will be lost inside the LED and cannot be emitted to the outside world, resulting in a low light output rate of the LED. Low, low brightness

At present, the technology of using etching to roughen the surface of LEDs to increase the brightness of LEDs is well known to the public. The existing technologies are roughly divided into two types: 1. Using high-temperature acidic liquids (such as sulfuric acid, phosphoric acid, etc.) to treat LEDs The disadvantage of etching is that the etching rate is unstable due to uneven temperature in the liquid, and the tank body needs to be well designed so that the liquid operating at high temperature is not dangerous, so the production cost of the tank body will also be relatively high. High; 2. Use ultraviolet light and light to add voltage to make the semiconductor components react with potassium hydroxide easily, and then achieve the purpose of etching, but in operation, it is necessary to make insulators for protection, lay electrode lines on the chip, and then energize and illuminate Etching, due to the problem of electrode conductivity, it can only be produced on a small chip, and the production of the entire wafer is limited by the distribution of power, so it is difficult to have good etching uniformity, and the production process is more complicated

Images