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Method for forming semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device formation, can solve the problems of increasing the difficulty of etching the nickel alloy layer, rising process manufacturing costs, and high platinum metal prices, so as to improve device leakage performance, strengthen diffusion barrier, and improve diffusion effect of ability

Active Publication Date: 2012-05-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
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Problems solved by technology

However, the higher price of platinum metal leads to an increase in the manufacturing cost of the process; at the same time, a higher content of platinum will increase the etching difficulty of removing the excess nickel alloy layer

Method used

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  • Method for forming semiconductor device
  • Method for forming semiconductor device
  • Method for forming semiconductor device

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Embodiment Construction

[0029] In the prior art nickel silicide technology, NiSi formed due to nickel diffusion 2 layer will worsen the channel leakage, and increasing the content of platinum will cause the cost to rise. Based on the above problems, the inventors conducted a series of experiments, mainly by changing the thickness of the nickel alloy layer, and comparatively studied the concentration relationship of each metal in the nickel silicide formed by the nickel alloy layer diffused in the substrate. In this experiment, the nickel alloy layer is an alloy layer of nickel and platinum.

[0030] Such as Figure 5 Shown is a schematic diagram of the concentration distribution of nickel in the nickel silicide layer in the substrate, the abscissa represents the depth of the substrate, and the ordinate represents the concentration of nickel contained in the position corresponding to the depth of the substrate. Such as Image 6 Shown is a schematic diagram of the concentration distribution of plati...

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Abstract

The invention provides a method for forming a semiconductor device, comprising the following steps: providing a substrate, a grid structure positioned on the substrate and a source area and a drain area which are both positioned in two side substrates of the grid structure; forming a nickel alloy layer on the exposed substrate surface containing nickel and at least one of other metals and having the thickness of 150-400 angstrom; and annealing the nickel alloy layer to form a nickel silicide in the substrate. According to the method, the diffusing capacity of the subsequently-formed nickel silicide in platinum is improved through improving the thickness of the nickel alloy layer which is in the range of 150-400 angstrom to enhance the diffusion barrier performance of the platinum element to the nickel element, thereby avoiding the diffusion of nickel to channel regions below a gate oxidation layer, reducing the generation of NiSi2 layers and improving the problem of deteriorating the electric leakage performance due to the development of the NiSi2 layer to channels.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] The self-aligned silicide technology is a process technology that reduces the resistance of the gate electrode and the source / drain region by forming a metal silicide layer on the gate electrode and the source / drain region. Nickel silicide layers and cobalt silicide layers are widely used as metal silicide layers. The Chinese patent application with the patent publication number CN101432860A provides a technical solution of using the nickel silicide layer as the metal silicide. [0003] The nickel silicide layer formed by nickel salicide technology may have different composition ratios. For example, the nickel silicide layer can be Ni 2 Si layer, NiSi layer or NiSi 2 any of the layers. Among them, the composition of different silicides is determined by the ratio of nickel to silicon in the r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/283H01L21/336
Inventor 杨瑞鹏孔祥涛胡宇慧
Owner SEMICON MFG INT (SHANGHAI) CORP
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