Semiconductor memory cell, device and preparation method thereof

Abstract

The invention discloses a semiconductor memory cell, a device and a preparation method thereof. The semiconductor memory cell comprises: a substrate, a channel region located above the substrate, a grid region located above the channel region, a source area and leakage area located above the substrate and on two sides of the channel region, a buried layer located between the substrate and the channel region and is made by a material whose forbidden bandwidth is narrower than the forbidden bandwidth of the channel region material. Because the forbidden bandwidth of the buried layer is narrower than the forbidden bandwidth of the channel region material, a hole barrier is formed in the buried layer so that the hole stored in the buried layer is difficult to be leaked out facing the barrier. By using the method of the invention, information maintaining time of the memory cell using a floating body effect can be increased.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a semiconductor storage unit, a device and a preparation method thereof. Background technique [0002] Microelectronics products are mainly divided into two categories: logic devices and memory devices. As an important part of storage devices, dynamic random access memory (DRAM) can provide high-speed data read and write operations, but the stored information is easily lost in the event of power failure, so it is called volatile semiconductor memory. In computer systems, DRAMs are generally placed between high-speed microprocessors and low-speed non-volatile memories, and are used to match high-speed data processing and low-speed data access. With the continuous development of information technology, the development of high-speed and high-density DRAM has become an important direction of storage technology research. [0003] A traditional dynamic random access memory d...

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Problems solved by technology

[0008] The purpose of the present invention is to solve the problem that the holes stored near the substrate can easily leak out through the PN junction between the source region and the substrate or the PN junction between the drain region and the substrate when the floating body memory unit in the prior art is powered off. , thus leading to the technical problem of the short data retention time of FBC, thereby providing a semiconductor memory unit, a device and a preparation method thereof

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