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Laser ray wavelength modification apparatus

A wavelength conversion and conversion device technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve problems such as difficulty in ensuring high optical extraction efficiency of wavelength-converted light, inability to fully realize high-power optical output, etc. Take out the effect of efficiency

Inactive Publication Date: 2012-05-23
USHIO DENKI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, according to the above-mentioned laser wavelength conversion device, among the wavelength converted lights λab and λa2b output to the outside, a part of the wavelength converted light λab transmitted through the fundamental wave light reflecting element 14 is absorbed by the fundamental wave light reflecting element 14, and it is difficult to ensure the wavelength conversion. High light extraction efficiency of light, as a result, there is a problem that high-power light output cannot be fully realized

Method used

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  • Laser ray wavelength modification apparatus
  • Laser ray wavelength modification apparatus
  • Laser ray wavelength modification apparatus

Examples

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Embodiment 1

[0067] according to figure 1 With the structure shown, the laser wavelength conversion device 1 was produced under the following conditions.

[0068] -Semiconductor laser element 12: An array having a semiconductor laser element structure is arranged on the substrate 11, and this semiconductor laser element emits infrared light with a wavelength of 1064 nm as the fundamental light λa.

[0069] · Wavelength conversion element 13: Periodic polarization inversion lithium niobate (PPLN) is used.

[0070] · Fundamental light reflection element 14: A volume Bragg grating (VBG) with a thickness of 4 mm is used.

[0071] · Selective reflection member 17: (thickness 2.4μm) is formed by the vapor deposition method by a multilayer film laminated by 17 layers, the multilayer film is made of silicon dioxide (SiO 2 ) Layer and titanium dioxide (TiO 2 ) Layer composition.

[0072] · Dichroic mirror 15: Arranged in a state where the surface 15b is inclined at 45 degrees with respect to the optical ax...

Embodiment 2

[0076] In the same structure as in Example 1, the oscillation wavelength of the semiconductor laser element 12 was set to infrared light of 930 nm, and the periodic structure, reflectance, etc. were adjusted to correspond to the same wavelength for other components, thereby fabricating an optical wavelength conversion device 2 .

[0077] In addition, this laser wavelength conversion device 2 outputs blue visible light with a wavelength of 465 nm as wavelength converted light.

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Abstract

Provided is a laser ray wavelength modification apparatus capable of outputting light having desired wavelength at high light extraction efficiency. The laser ray wavelength modification apparatus includes a semiconductor laser element that emits a laser ray as a fundamental wave light; a fundamental wave light reflecting element comprising a volume Bragg grating (VBG) that operates as an external resonator with respect to the semiconductor laser element; and a wavelength modification element arranged between the semiconductor laser element and the fundamental wave light reflecting element, the wavelength modification element converts a wavelength portion of the fundamental wave light to a wavelength modification light. The laser ray wavelength modification apparatus is characterized by comprising a selective reflection member which permits fundamental wave light among light rays emitted from the wavelength modification element to pass through to the fundamental wave light reflecting element while reflecting the wavelength modification light. A dichroic mirror is arranged between the semiconductor laser element and the wavelength modification element. The dichroic mirror transmits the fundamental wave light and removes by reflection out the wavelength modification light.

Description

Technical field [0001] The present invention relates to a laser wavelength conversion device that uses nonlinear optical crystals to convert the wavelength of laser light. More specifically, it relates to the use of a volume Bragg grating (VBG: Volume Bragg Grating) as a reflecting element constituting an external resonator, and a periodic pole PPLN (Periodically Poled Lithium Niobate) is used as a laser wavelength conversion device for nonlinear optical crystals. Background technique [0002] There is known a device that converts the wavelength of the laser light emitted from a semiconductor laser element into a desired wavelength, for example, a second high-frequency wave, through a nonlinear optical crystal. [0003] In such laser wavelength conversion devices, it is desired to achieve higher light extraction efficiency of wavelength-converted light and achieve higher power light output. [0004] In particular, to achieve high-power light output, the oscillation wavelength is req...

Claims

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Application Information

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IPC IPC(8): H01S5/125G02F1/35
CPCG02F2201/346H01S3/109G02F2001/3503H01S5/4031H01S5/141G02F1/3501G02F1/3503
Inventor 田中秀和
Owner USHIO DENKI KK