Film formation apparatus and film forming method

Abstract

Disclosed is a film-forming apparatus (1) which comprises: a chamber (2) that has an internal space in which both an object to be processed (W) that has a film formation surface and a target (3) that has a sputtering surface (3a) are arranged in such a manner that the object to be processed (W) and the target (3) face each other; an exhaust unit for reducing the pressure within the chamber (2); a first magnetic field-generating unit (4) for generating a magnetic field in the internal space where the sputtering surface (3a) is exposed; a direct current power supply (9) for applying a negative direct current voltage to the target (3); a gas-introducing unit (11) for introducing a sputtering gas into the chamber (2); and a second magnetic field-generating unit (13) which comprises a first generation part (13u) that is arranged in the vicinity of the target (3) and applied with a current value that is defined as Iu and a second generation part (13d) that is arranged in the vicinity of the object to be processed and applied with a current value that is defined as Id, and which generates a vertical magnetic field so that vertical magnetic field lines pass between the entire sputtering surface (3a) and the entire film formation surface of the object to be processed (W) at a predetermined interval by applying electric currents to the first generation part (13u) and the second generation part (13d) so that the relation Id < Iu is satisfied.

Description

technical field [0001] The present invention relates to a film-forming device and a film-forming method for forming a film on the surface of an object to be processed, and in particular to a film-forming device and a film-forming method using a DC magnetron method using a sputtering method. The sputtering method is One of thin film forming methods. [0002] this application claims priority based on Japanese Patent Application No. 2009-169447 for which it applied on July 17, 2009, and uses the content here. Background technique [0003] Conventionally, for example, in a film-forming process in the production process of a semiconductor device, a film-forming device using a sputtering method (hereinafter referred to as a "sputtering device") is used. [0004] In the sputtering device for this purpose, along with the miniaturization of the wiring pattern in recent years, it is strongly required that for the microscopic holes with a high aspect ratio whose depth-to-width ratio e...

AI Technical Summary

Problems solved by technology

That is, there is a problem that, in the cross-section of the micropore formed on the outer peripheral portion of the substrate, the shape of the film formed between the bottom of the micropore and the side wall on one side is different from that between the bottom and the side wall on the other side. The shape of the film formed between the different

[0010] However, if a plurality of cathode units are arranged in the vacuum chamber as described in the above-mentioned Patent Document 1, the device structure becomes complicated, and sputtering power sources or magnet assemblies corresponding to the number of targets are required... . etc., there is a problem that the number of parts increases and the cost increases

Furthermore, there is also a problem that the use efficiency of the target also becomes low and the production cost increases.

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