Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and system for producing monosilane

A technology of monosilane and equipment, which is applied in the field of preparation of monosilane, can solve problems such as the limitation of catalyst thermal stability, and achieve the effect of speed improvement

Active Publication Date: 2014-07-23
SCHMID SILICON TECH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practice, due to the limited thermal stability of the catalyst, compromise measures must be taken.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for producing monosilane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Other features of the present invention are given by the following description of preferred embodiments in conjunction with the dependent claims. In the embodiment according to the present invention, each feature is realized individually or in combination with one another. The described preferred embodiments are only used to illustrate and better understand the present invention, but do not limit the present invention in any way.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a plant for the preparation of monosilane comprising a reaction tower (100) with a trichlorosilane feed (101) and a discharge for the formed silicon tetrachloride pipe (102), and at least one condenser (103), through which the monosilane produced can be discharged from the reaction tower, wherein the reaction tower contains at least two reaction zones (104; 105) for reaction / distillation, the The reaction zones operate at different temperatures and contain different catalytic solids. Furthermore, the invention relates to a process for the preparation of monosilane by catalytic disproportionation of trichlorosilane, in which process the disproportionation is carried out in at least two reaction zones (104; 105) for reaction / distillation, said The reaction zones operate at different temperatures and contain different catalytic solids.

Description

Technical field [0001] The invention relates to a method for preparing monosilane (SiH 4 ) Equipment, the equipment includes a reaction tower and the reaction tower with a trichlorosilane feed pipe (Zulauf) and a silicon tetrachloride (SiCl 4 ) And at least one condenser, through which the prepared monosilane can be discharged from the reaction tower. In addition, the present invention also relates to a method for preparing monosilane through the catalytic disproportionation reaction of trichlorosilane. Background technique [0002] High-purity silicon is usually prepared in a multi-step process from metallurgical silicon that can have relatively high impurity content. In order to purify metallurgical silicon, for example, metallurgical silicon can be converted into a trihalosilane, for example, trichlorosilane (SiHCl 3 ), and then thermally decomposed into high-purity silicon. For example, DE 29 19 086 describes such a process. Alternatively, as described in DE 33 11 650, high...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B01D3/00C01B33/04B01J35/00
CPCB01D3/009C01B33/043Y02P20/10B01D3/32
Inventor A·佩特里克C·施密德J·哈恩
Owner SCHMID SILICON TECH