Method for cleaning silicon wafer

A technology for cleaning silicon wafers and silicon wafers, which is applied to cleaning methods and appliances, chemical instruments and methods, electrical components, etc., can solve problems such as uneven dispersion of ultrasonic waves, limited cleaning cleanliness, and uneven cleaning of silicon wafers. Cleaning effect, low cost, effect of ensuring cleanliness

Inactive Publication Date: 2012-06-13
ZHENJIANG GANGNAN ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. Since the silicon wafer is vertically inserted into the cleaning basket, the ultrasonic wave source diverges from the bottom upward, and there is a gradient problem in the ultrasonic wave, which makes the cleaning of the silicon wafer uneven and the cleanl

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A method for cleaning silicon wafers, comprising the steps of:

[0026] A. Rough cleaning: Put the silicon wafer into the silicon wafer cleaning basket, immerse the cleaning basket containing the silicon wafer in deionized water and perform rough cleaning under the action of ultrasonic waves; the ultrasonic frequency is 80KHz, and the rough cleaning time is 15 minutes;

[0027] B. Soaking: Soak the rough-washed silicon chip in citric acid at room temperature, the mass percent concentration of citric acid is 10%, and the soaking time is 30 minutes; then soak in kerosene for 20 minutes;

[0028] C. Cleaning: The soaked silicon wafer is immersed in deionized water for cleaning; the deionized water contains fluff particles, and the content of fluff particles is 20%, calculated by volume ratio; during the cleaning process, the silicon wafer is rotated in deionized water, The silicon wafer is rotated at a speed of 20r / min and rotated for 2 minutes; then reversed, the silicon ...

Embodiment 2

[0031] A method for cleaning silicon wafers, comprising the steps of:

[0032] A. Rough cleaning: Put the silicon wafer into the silicon wafer cleaning basket, immerse the cleaning basket containing the silicon wafer in deionized water and perform rough cleaning under the action of ultrasonic waves; the ultrasonic frequency is 80KHz, and the rough cleaning time is 15 minutes;

[0033] B. Soaking: Soak the rough-washed silicon chip in citric acid at room temperature, the mass percent concentration of citric acid is 10%, and the soaking time is 30 minutes; then soak in kerosene for 20 minutes;

[0034] C. Cleaning: The soaked silicon wafer is immersed in deionized water for cleaning; the deionized water contains fluff particles, and the content of fluff particles is 20%, calculated by volume ratio; during the cleaning process, the silicon wafer is rotated in deionized water, The silicon wafer rotates at a speed of 20r / min and rotates for 2 minutes; rotates in the other direction...

Embodiment 3

[0037] A method for cleaning silicon wafers, comprising the steps of:

[0038] A. Rough cleaning: Put the silicon wafer into the silicon wafer cleaning basket, immerse the cleaning basket containing the silicon wafer in deionized water and perform rough cleaning under the action of ultrasonic waves; the ultrasonic frequency is 80KHz, and the rough cleaning time is 15 minutes;

[0039] B. Soaking: Soak the rough-washed silicon chip in citric acid at room temperature, the mass percent concentration of citric acid is 10%, and the soaking time is 30 minutes; then soak in kerosene for 20 minutes;

[0040] C. Cleaning: The soaked silicon wafer is immersed in deionized water for cleaning; the deionized water contains fluff particles, and the content of fluff particles is 20%, calculated by volume ratio; during the cleaning process, the silicon wafer is rotated in deionized water, The silicon wafer rotates at a speed of 20r / min and rotates for 2 minutes; in the second direction, the s...

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Abstract

The invention provides a method for cleaning a silicon wafer. The method for cleaning the silicon wafer comprises the steps of roughly cleaning, soaking, cleaning and drying. The silicon wafer is cleaned through positive and negative rotation, so residual grinding sand and impurities attached to the silicon wafer can be removed effectively and the surface cleanliness of the silicon wafer is guaranteed. In addition, a large cleaning device and a great amount of cleaning solution are not required and a large amount of electric power and a large amount of time are not required, so the method has the advantages of effectively saving space, saving cost, saving energy, saving time and achieving a good cleaning effect. The method is low in cost, simple in operation and low in environmental pollution.

Description

technical field [0001] The invention relates to a silicon wafer cleaning method, which belongs to the technical field of silicon wafer processing. Background technique [0002] A silicon wafer is a silicon material that is cut into pieces by processing. Therefore, the silicon material to the usable silicon wafer has to go through multiple processes such as cutting and cleaning. With the development of society, silicon wafers are used more and more, and the processing of silicon wafers has also received more attention. [0003] Cleaning is one of the production processes of silicon wafers, and its cleaning quality has a great influence on the performance of silicon wafers. The traditional cleaning method adopts ultrasonic cleaning. In this cleaning method, silicon wafers are installed in a cleaning basket, deionized water is introduced, and then ultrasonic waves are used to clean silicon wafers. Usually, there are 6-8 processes for cleaning, and each process is 10-15 minut...

Claims

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Application Information

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IPC IPC(8): B08B7/04H01L21/02
Inventor 聂金根
Owner ZHENJIANG GANGNAN ELECTRIC
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