A method for preparing silicon nanowires on a single crystal silicon substrate

Abstract

The invention provides a method of preparing a silicon nanowire on a monocrystalline silicon substrate. The method comprises the following steps: providing the monocrystalline silicon substrate; forming a first silicon dioxide layer, a silicon nitride layer and a second silicon dioxide layer on the monocrystalline silicon substrate in order; utilizing a first mask plate to carry out photoetching and definition on an active region, etching and removing the second silicon dioxide layer, the silicon nitride layer and the first silicon dioxide layer of the active region, and exposing the monocrystalline silicon substrate of the active region; etching transversely and removing part of the silicon nitride layer to form a groove; carrying out epitaxial growth of a silicon layer on the exposed monocrystalline silicon substrate, wherein the silicon layer fills out the groove; utilizing the first mask plate to carry out photoetching and definition on a silicon nanowire support area, etching the silicon layer, and forming the silicon nanowire in the groove; and etching and removing the second silicon dioxide layer, the silicon nitride layer and the first silicon dioxide layer apart from the active region so as to hang the silicon nanowire. The preparation method of the invention is simple and controllable, and production cost is low.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for preparing silicon nanowires on a single crystal silicon substrate. Background technique [0002] In recent years, with the continuous exploration and research in the field of nanotechnology, materials with one-dimensional nanostructures, such as silicon nanowires, have attracted more and more attention. Silicon nanowires have significant quantum effects, large specific surface area and other characteristics, and have good application prospects in MOS devices, sensors and other fields. How to prepare silicon nanowires in a simple, controllable and low-cost way has become an important topic. [0003] The preparation methods of silicon nanowires can be mainly divided into two categories: "bottom-up" and "top-down". The bottom-up approach mainly relies on nanotechnology, using catalysts to catalyze the growth of nanowires. Although this method...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing silicon nanowires on a single crystal silicon substrate, so as to solve the problem of high cost of preparing silicon nanowires based on SOI substrates in the prior art

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