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Preparation method for ultraviolet-proof thin-film solar cell

A solar cell and anti-ultraviolet technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that cannot be directly applied, and cannot effectively prevent the adverse effects of ultraviolet rays on thin-film solar cells, and achieve expanded utilization, low cost, and simple process easy to control effect

Inactive Publication Date: 2012-06-13
CHANGZHOU INST OF DALIAN UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There have not been any similar reports on thin-film batteries. Due to the difference in the manufacturing process of thin-film batteries and bulk silicon batteries, the technology developed by Professor Nayfeh and others cannot be directly applied to thin-film battery technology.
Nano-silicon thin-film materials themselves have been widely used in silicon-based thin-film batteries [see patents: CN101369610A, CN101262024A, CN101866836A, etc.], but these applications are not aimed at ultraviolet rays, and their manufacturing processes and thin-film designs are very different. Effectively prevent the adverse effects of ultraviolet rays on thin-film solar cells

Method used

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  • Preparation method for ultraviolet-proof thin-film solar cell
  • Preparation method for ultraviolet-proof thin-film solar cell
  • Preparation method for ultraviolet-proof thin-film solar cell

Examples

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Effect test

Embodiment 1

[0022] A kind of preparation method of anti-ultraviolet thin-film solar cell, selects glass as substrate material, at first on glass substrate 1 material by plasma-enhanced chemical vapor deposition (PECVD) (microwave power 600W, H 2 Flow 20sccm, SiH 4 The flow rate is 8 sccm, the substrate temperature is 200°C, and the deposition time is 2 minutes) to prepare a 12nm thick amorphous silicon film; then turn off the SiH 4 Gas source, maintain H plasma discharge, use H plasma to etch the amorphous silicon film in situ for 1 minute, and prepare a layer of nano-silicon film layer 2 with a diameter of 2 nm and a thickness of 8 nm; Si prepared by microwave plasma technology 3 N 4 Anti-reflection layer 3 (microwave power 550-600W, N2 flow rate 25-35sccm, SiH4 flow rate 8-10sccm, substrate temperature 200-300°C, deposition time 30 minutes-2 hours); finally follow the conventional thin film battery preparation process before Electrode 4, p-i-n single-junction or multi-junction batter...

Embodiment 2

[0024] A preparation method of an ultraviolet-resistant thin-film solar cell, select glass as the substrate material, first pass plasma enhanced chemical vapor deposition (PECVD) on the glass substrate 1 material (parameters are the same as in Example 1, and deposit for 90 seconds) Prepare a 10nm thick amorphous silicon film; then turn off the SiH 4 gas supply, then close the SiH 4 Gas source, maintain H plasma discharge, use H plasma to etch the amorphous silicon film in situ for 3 minutes, and prepare a nano-silicon film layer 2 with a diameter of 5 nm and a thickness of 5 nm; Prepared on Si 3 N 4 Anti-reflection layer 3; finally prepare the front electrode 4, p-i-n single-junction or multi-junction battery 5 and back electrode 6 sequentially according to the conventional thin-film battery preparation process, and the ultraviolet-proof thin-film solar cell can be obtained after conventional battery packaging. After testing, this Thin film solar cells (such as figure 1 ) ...

Embodiment 3

[0026] A method for preparing an ultraviolet-resistant thin-film solar cell. Stainless steel is selected as an opaque substrate 7. First, a back electrode 6, an n-i-p single-junction or multi-junction cell 5 and a front electrode 4 are sequentially prepared on the stainless steel material according to a conventional thin-film cell manufacturing process; Then prepare a 10nm thick amorphous silicon film by plasma enhanced chemical vapor deposition (PECVD) (parameters are the same as in Example 1, deposited for 90 seconds); then close the SiH 4 Gas source, maintain H plasma discharge, use H plasma to etch the amorphous silicon film in situ for 1 minute, and prepare a nano-silicon film layer 2 with a diameter of 2 nm and a thickness of 6 nm; finally, after conventional battery packaging UV-resistant thin-film solar cells (such as figure 2 ), after testing, the conversion efficiency of this thin-film solar cell in the ultraviolet band has increased by 61%, and the service life has...

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Abstract

The invention belongs to the technical field of thin-film solar cell preparation process. A preparation method for an ultraviolet-proof nano-crystalline silicon thin-film solar cell includes that, for transparent materials, an amorphous silicon film is directly settled before nano-crystalline silicon is prepared by the plasma etching technique; for opaque materials, the amorphous silicon film is settled after each layer is prepared according to conventional thin-film solar cell preparation process, then the nano-crystalline silicon is prepared by means of the plasma etching technique; and finally the ultraviolet-proof thin-film solar cell is prepared. The method is simple and easily controllable in process and low in cost, ultraviolet rays irradiated on the surface of the cell can be converted into light waves which can be absorbed by the cell by means of the photoluminescence effect of the nano-crystalline silicon, and thereby the service life of the cell is prolonged while utilization of sunlight ultraviolet band by the cell can be expanded to improve conversion efficiency of the cell.

Description

technical field [0001] The invention belongs to the field of preparation of thin-film solar cells, in particular to a preparation method of thin-film solar cells which can prevent the influence of ultraviolet rays. . Background technique [0002] With the increasing carbon emissions of human society and the depletion of conventional energy, vigorously developing new energy and energy-saving and environmental protection industries has become the only way for countries all over the world to achieve sustainable social development and move towards civilization. Photovoltaic industry is currently one of the fastest growing new energy industries in the world. Solar photovoltaic power generation has developed rapidly in recent years because it is not restricted by energy resources, raw materials and application environments. The average annual growth rate of my country's photovoltaic industry in the past five years has reached more than 40%. In 2009, my country's solar cell outpu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/055H01L31/0216H01L31/041
CPCY02E10/50Y02E10/52Y02P70/50
Inventor 吴爱民林国强谭毅李佳艳
Owner CHANGZHOU INST OF DALIAN UNIV OF TECH
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